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BF245RLRA

Onsemi

BF245RLRA by Onsemi

BF245RLRA by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for ULTRA HIGH FREQUENCY AMPLIFICATION. With a max ID of 0.1A, it's ideal for AMPLIFIER applications in the electronics industry.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 303 parts In-Stock

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Digiode

USA . 262 parts In-Stock

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Native Components

USA . 748 parts In-Stock

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$0.059

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$0.057

748

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$0.057

TANS Electronics

Latvia . 6,205 parts In-Stock

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Corphita

USA . 2,247 parts In-Stock

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SupplyDigital Components

Austria . 1,476 parts In-Stock

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Northwest PG Solutions

USA . 1,241 parts In-Stock

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Problanco Electronics

Mexico . 806 parts In-Stock

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Kulean Microsystems

USA . 524 parts In-Stock

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UHIMA Technologies

Türkiye . 507 parts In-Stock

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Corohmni

South Africa . 327 parts In-Stock

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Overview

Elevate your RF amplifier performance with the BF245RLRA by Onsemi. Crafted by a trusted manufacturer known for top-quality components, this N-channel FET offers unparalleled reliability and precision. Ideal for applications in the ultra-high frequency band, this transistor delivers exceptional amplification capabilities with a minimum DS breakdown voltage of 30V. Say goodbye to signal loss and hello to enhanced efficiency with the BF245RLRA, designed to elevate your electronic projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally offer better performance and efficiency compared to P-channel transistors, making this product a suitable choice for many applications.

Configuration: SINGLE

Simplifies the circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this transistor can handle higher voltage levels without getting damaged, making it suitable for a wide range of applications.

Package Shape: ROUND

The round package shape allows for easier mounting and placement within electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection, ensuring stable performance in different environments.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer ease of use and can be easily controlled by applying a negative voltage to the gate terminal.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed to operate in the ultra-high frequency band, making it suitable for applications that require high-speed signal processing.

No. of Terminals: 3

The 3 terminals provide the necessary connections for proper functioning in amplifier circuits and other applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for easy handling and installation in circuits, ensuring efficient use of space.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers reliable performance and low noise characteristics, making this transistor suitable for high-quality amplification.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this product a durable and efficient choice.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and long-term stability in various operating conditions.

Maximum Drain Current (ID): 0.1 A

With a maximum drain current of 0.1A, this transistor can handle moderate power levels efficiently.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and connection within electronic circuits, making installation hassle-free.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245RLRA attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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