Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .015 A; Minimum Power Gain (Gp): 12 dB;
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RF Small Signal Field Effect Transistors (FET) NE3210S01-T1B attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Nec Compound Semiconductor Devices
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NE3210S01-T1B Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Tokyo, March 14, 2002 - NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) and Sumitomo Electric Industries, Ltd. (SEI) today announced they have joined into a multi-source agreement (MSA) to set a common architecture for 10 Gigabit per second (Gbps) detector modules used in optical networking. Sample shipments will start from today of products based on this common standard. The new device is developed to work within the 1.3 micron ~ 1.55 micron wavelength range and is mounted with a amplifier on the industry's smallest class of metal ceramic packages (L x W x H = 9.8mm x 7.5mm x 4.0mm). This super-small module addresses the calls coming from the industry for downsizing of 10 Gbps optical network transceivers. The detector module facilitates conversion of optical signals to electric signals and is one of the essential devices for 10 Gbps digital transmissions over optical fiber networks. NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) is a leading provider of opticaland microwave devices, committed to meeting the specialized needs of its customers in the broadband and mobile networking fields with its compound and silicon semiconductor technologies. NEC Compound Semiconductor Devices, was divided from NEC Corporation and established in October 2001.
LM358N
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
BAV99
Won-top Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
MBRS340T3G
Onsemi
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
2N7002
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
SMBJ18CA
Sangdest Microelectronics (Nanjing)
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0520L-T1
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
SS14
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358MX
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Infineon Technologies
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
1N4148WT
1552200168
Molex
WIRE AND CABLE;
CRCW080510K0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510K0FKEA is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 reference standard compliance and -55 to 155 °C operating temperature range.
LD1117S33TR
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
BF245C
Baneasa S A
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; Qualification: Not Qualified;
TGF2023-2-01
Qorvo
Qorvo's TGF2023-2-01 is an N-channel RF FET for amplifier applications in KU band. Featuring GaN technology, it operates in depletion mode with a max ID of 1.25A. This single-configured transistor is surface-mountable and has a rectangular package shape without leads.
BF513T/R
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: GULL WING; Additional Features: LOW NOISE;
BF510-TAPE-7
BF510-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This surface-mount transistor ensures reliable performance up to 150 °C.
2N3819
Texas Instruments
2N3819 by Texas Instruments is an N-CHANNEL RF Small Signal Field Effect Transistor (FET) with a min DS Breakdown Voltage of 25V. It operates in DEPLETION MODE and has a max power dissipation of 0.36W. This transistor is commonly used in applications requiring low-power amplification or switching.
2N4221
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .015 A; Field Effect Transistor Technology: JUNCTION; Terminal Form: WIRE;
BF545B-TAPE-13
BF545B-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BLF882S
RF Small Signal Field-Effect Transistors;
3N204
3N204 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage and 14dB Power Gain, ideal for AMPLIFIER applications. Operating in DUAL GATE, DEPLETION MODE, it offers 0.05A Drain Current and 0.36W Power Dissipation at 200°C. Package: METAL CYLINDRICAL with SOURCE AND SUBSTRATE connection.
BF991T/R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; No. of Terminals: 4;
BFW10
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): .8 pF; Terminal Form: WIRE; Field Effect Transistor Technology: JUNCTION;
2N4416A
Asi Semiconductor
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; JESD-30 Code: O-MBCY-W4; Terminal Form: WIRE;
933505290235
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Field Effect Transistor Technology: JUNCTION; Qualification: Not Qualified;
BF244BRLRE
BF244BRLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
2N4416
Linear Integrated Systems
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Operating Mode: DEPLETION MODE;
BLF184XR
Ampleon Netherlands B V
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
NE5550279A-T1-A
Renesas Electronics
NE5550279A-T1-A by Renesas Electronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.6A Drain Current, and 6.25W Power Dissipation. It operates in ULTRA HIGH FREQUENCY BAND for RF applications like amplifiers due to its ENHANCEMENT MODE and MICROWAVE package style.
BF909,215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .04 A; No. of Elements: 2; Minimum DS Breakdown Voltage: 7 V;
CLF1G0060S-10U
CLF1G0060S-10U by NXP Semiconductors is a high-performance N-channel FET designed for C-band amplification. It features a 150V breakdown voltage, operates in depletion mode, and utilizes gallium nitride technology for superior efficiency. Ideal for RF applications, it comes in a flatpack ceramic package.
BF998B-GS08
Vishay Telefunken
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
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NE3210S01-T1B
NE3210S01-T1B by Renesas Electronics is a N-CHANNEL RF FET with 12 dB Gp for AMPLIFIER applications in KU BAND. It has 3V DS Breakdown Voltage, 0.07A ID, and operates in DEPLETION MODE. The transistor features GULL WING terminals, MICROWAVE package style, and HETERO-JUNCTION technology.
Nec Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 3 V; Transistor Element Material: SILICON; Highest Frequency Band: KU BAND;
California Eastern Laboratories
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; JESD-30 Code: O-PRDB-G4; Package Body Material: PLASTIC/EPOXY;
Nec Electronics America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Additional Features: LOW NOISE, HIGH RELIABILITY; Package Style (Meter): MICROWAVE;
NE3210S01
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Body Material: UNSPECIFIED; JESD-609 Code: e0;
Nec Compound Semiconductor Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: GALLIUM ARSENIDE; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; Terminal Position: RADIAL;
NE3210S01-T1B-A
N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;
NE3210S01-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN LEAD; No. of Elements: 1; Field Effect Transistor Technology: HETERO-JUNCTION;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .165 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: X BAND; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; No. of Terminals: 4;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE, HIGH RELIABILITY; Field Effect Transistor Technology: HETERO-JUNCTION;
NE32400
N-CHANNEL; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (Abs) (ID): .07 A; Maximum Drain Current (ID): .07 A; Maximum Power Dissipation Ambient: .2 W;
NE32484A
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; No. of Terminals: 4; JESD-30 Code: O-CRDB-F4;
NE321000
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; JESD-30 Code: S-XUUC-N4; Minimum Power Gain (Gp): 12 dB;
NE321000-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Qualification: Not Qualified; Transistor Element Material: GALLIUM ARSENIDE;
NE32484A-SL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
NE3210S01-T1-A
N-CHANNEL; Maximum Drain Current (ID): .07 A; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .165 W; Maximum Drain Current (Abs) (ID): .07 A;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 1; No. of Terminals: 4;
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