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NE321000-A

Renesas Electronics

NE321000-A by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Qualification: Not Qualified; Transistor Element Material: GALLIUM ARSENIDE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE321000-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

3 V

Maximum Drain Current (ID):

.015 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

KA BAND

JESD-30 Code:

S-XUUC-N4

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Minimum Power Gain (Gp):

12 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

NE321000-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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