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3N225A

Texas Instruments

3N225A by Texas Instruments

3N225A by Texas Instruments is an N-CHANNEL RF FET with 20V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers 0.05A Drain Current and 0.36W Power Dissipation. Ideal for ULTRA HIGH FREQUENCY applications due to its METAL-OXIDE SEMICONDUCTOR technology and 0.03pF Feedback Capacitance.

Median Price

$8.495

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ace Electronics

USA . 123 parts In-Stock

1+ parts

$7.500

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123

$7.500

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American Microsemiconductor Inc.

USA . 14 parts In-Stock

1+ parts

$9.490

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14

$9.490

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Vyrian

USA . 8,622 parts In-Stock

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8,622

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Digiode

USA . 2,499 parts In-Stock

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2,499

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Distributors (Availability)

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Native Components

USA . 832 parts In-Stock

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$0.928

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832

$0.928

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Northwest PG Solutions

USA . 1,410 parts In-Stock

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$1.021

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1,410

$1.021

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Parana Technologies

USA . 2,145 parts In-Stock

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$1.759

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$2.330

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2,145

$1.759

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$2.330

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IDEA Electronic Components Group

UK . 614 parts In-Stock

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$1.976

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$1.778

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614

$1.976

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$1.778

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ChromeModa Solutions

Germany . 285 parts In-Stock

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$1.976

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$1.620

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285

$1.976

$1.620

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One Stop Electronics

USA . 1,315 parts In-Stock

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$9.050

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1,315

$9.050

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AZTECH Wire

Italy . 601 parts In-Stock

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$14.520

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601

$14.520

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Corphita

USA . 3,007 parts In-Stock

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DigiPath Technology Company

USA . 455 parts In-Stock

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$1.782

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455

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$1.782

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Overview

Unlock the power of advanced RF technology with the 3N225A by Texas Instruments. Designed for ultra-high frequency applications, this N-CHANNEL Field Effect Transistor offers unparalleled performance and reliability. With a rugged metal package body and a single configuration, this transistor is built to last. Whether you're working on communications systems, radar equipment, or RF amplifiers, the 3N225A delivers exceptional results. Trust Texas Instruments for top-quality components that bring your projects to the next level. Experience the difference with the 3N225A today!

Feature Benefit Bullets

Package Body Material: METAL

The metal body provides good thermal conductivity and ruggedness, making the transistor durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance and lower ON-resistance compared to P-channel transistors, making this transistor a good choice for RF small signal applications.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without failure, making it suitable for a variety of RF applications.

Maximum Drain Current (Abs) (ID): 0.05 A

The maximum drain current of 0.05A allows for high power handling capability, making this transistor suitable for RF power applications.

Maximum Power Dissipation (Abs): 0.36 W

The high power dissipation of 0.36W ensures that the transistor can operate efficiently without overheating, making it a reliable choice for RF applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperatures, making it suitable for demanding RF environments.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3N225A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.05 A

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.03 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

3N225A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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