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NE3210S01-T1-A

Renesas Electronics

NE3210S01-T1-A by Renesas Electronics

N-CHANNEL; Maximum Drain Current (ID): .07 A; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .165 W; Maximum Drain Current (Abs) (ID): .07 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

A-Z Elektronik GmbH

Germany . 6,979 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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6,979

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE3210S01-T1-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.07 A

Maximum Operating Temperature:

125 Cel

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.165 W

Sub-Category:

FET RF Small Signal

Trade Compliance

NE3210S01-T1-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Renesas Electronics

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