Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Additional Features: LOW NOISE, HIGH RELIABILITY; Package Style (Meter): MICROWAVE;
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RF Small Signal Field Effect Transistors (FET) NE3210S01-T1B attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Nec Electronics America
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Maximum Drain Current (ID):
Field Effect Transistor Technology:
Highest Frequency Band:
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Transistor Element Material:
NE3210S01-T1B Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CN
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
1N4148WS
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
2N7002
Telcom Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
LL4148
Synsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Yangzhou Yangjie Electronics
EU2B-YS2J03F
Idec
ROTARY SWITCH;
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
New England Semiconductor
AH180-WG-7
AH180-WG-7 by Diodes Inc. is a magnetic field sensor with 1.5mT hysteresis, 0.30V output range, and 9mA max operating current. Ideal for applications requiring non-inverting analog voltage output in a compact rectangular package suitable for surface mount installations.
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
1N5819HW-7-F
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
KSZ9031RNXIA
Microchip Technology
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
ERJU06F10R0V
Panasonic
ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
2N4416
Crimson Semiconductor
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 4; No. of Elements: 1; JESD-30 Code: O-MBCY-W4;
FLC057WG
Fujitsu
FLC057WG by Fujitsu is an N-CHANNEL RF FET with 15V DS Breakdown Voltage. It operates in C BAND, has a max power dissipation of 3.75W, and can withstand up to 175°C. Ideal for high-frequency applications requiring reliable signal amplification in compact designs.
BF990ATRL13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Position: DUAL; Case Connection: SOURCE;
BF245ARLRA
BF245ARLRA by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE at 0.1A ID, ideal for ULTRA HIGH FREQUENCY AMPLIFIER applications. The transistor features a ROUND package with THROUGH-HOLE terminals and SILICON element material.
FLC103WG
Fujitsu Semiconductor America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION;
BF904A
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .03 A; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;
934057513135
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Terminals: 4;
TGF1350SPCX
Texas Instruments
TGF1350SPCX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage and 8dB Power Gain. Ideal for KU BAND applications, it operates in DEPLETION MODE with 0.1A Drain Current, 0.7W Power Dissipation, and up to 150°C Operating Temperature.
2N3819-E3
Vishay Intertechnology
2N3819-E3 by Vishay Intertechnology is a P-CHANNEL RF FET with 8V DS Breakdown Voltage. Ideal for ULTRA HIGH FREQ SWITCHING applications, it operates in DEPLETION MODE with 4pF Crss and 0.36W Power Dissipation at 150°C max temp.
VMMK-1218-TR1G
Broadcom
Broadcom's VMMK-1218-TR1G is an N-channel RF FET with a min DS breakdown voltage of 5V and power gain of 6.7dB, ideal for amplifier applications in the Ku band. This single configuration transistor operates in enhancement mode, with a max drain current of 0.1A and high electron mobility technology for efficient performance.
BLP8G21S-160PV
RF Small Signal Field-Effect Transistors;
BF998,215
BF998,215 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQ BAND and has a 0.03A Drain Current. Ideal for AMPLIFIER applications, this transistor features DUAL GATE DEPLETION MODE and a max power dissipation of 0.2W.
2N4221A
2N4221A by Texas Instruments is an N-CHANNEL RF FET with a max power dissipation of 0.3W and max operating temp of 200°C. Ideal for switching applications, it features a single configuration in a round cylindrical package with isolated case connection.
NE3210S01-T1B-A
Renesas Electronics
N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;
BF245RLRA
BF245RLRA by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for ULTRA HIGH FREQUENCY AMPLIFICATION. With a max ID of 0.1A, it's ideal for AMPLIFIER applications in the electronics industry.
BLM8G0710S-30PBG
BF244ARLRP
BF244ARLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
933114330126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: TIN; JEDEC-95 Code: TO-92; Maximum Drain Current (ID): .025 A;
2N4220A
2N4220A by Texas Instruments is an N-CHANNEL FET with a max power dissipation of 0.3W, ideal for switching applications. Featuring a cylindrical package style and junction technology, it operates at up to 200°C temperature. The transistor has 4 terminals in a round metal package body for isolated case connection.
BF545A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JEDEC-95 Code: TO-236AB; JESD-30 Code: R-PDSO-G3;
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NE3210S01-T1B
Nec Compound Semiconductor Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .015 A; Minimum Power Gain (Gp): 12 dB;
NE3210S01-T1B by Renesas Electronics is a N-CHANNEL RF FET with 12 dB Gp for AMPLIFIER applications in KU BAND. It has 3V DS Breakdown Voltage, 0.07A ID, and operates in DEPLETION MODE. The transistor features GULL WING terminals, MICROWAVE package style, and HETERO-JUNCTION technology.
Nec Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 3 V; Transistor Element Material: SILICON; Highest Frequency Band: KU BAND;
California Eastern Laboratories
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; JESD-30 Code: O-PRDB-G4; Package Body Material: PLASTIC/EPOXY;
NE3210S01
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Body Material: UNSPECIFIED; JESD-609 Code: e0;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: GALLIUM ARSENIDE; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; Terminal Position: RADIAL;
NE3210S01-T1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN LEAD; No. of Elements: 1; Field Effect Transistor Technology: HETERO-JUNCTION;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .165 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: X BAND; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; No. of Terminals: 4;
Nec Electronics America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE, HIGH RELIABILITY; Field Effect Transistor Technology: HETERO-JUNCTION;
NE32400
N-CHANNEL; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (Abs) (ID): .07 A; Maximum Drain Current (ID): .07 A; Maximum Power Dissipation Ambient: .2 W;
NE32484A
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; No. of Terminals: 4; JESD-30 Code: O-CRDB-F4;
NE321000
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; JESD-30 Code: S-XUUC-N4; Minimum Power Gain (Gp): 12 dB;
NE321000-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Qualification: Not Qualified; Transistor Element Material: GALLIUM ARSENIDE;
NE32484A-SL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
NE3210S01-T1-A
N-CHANNEL; Maximum Drain Current (ID): .07 A; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .165 W; Maximum Drain Current (Abs) (ID): .07 A;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .015 A; Additional Features: HIGH RELIABILITY; Package Style (Meter): UNCASED CHIP;
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