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NE321000

Nec Electronics America

NE321000 by Nec Electronics America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .015 A; Additional Features: HIGH RELIABILITY; Package Style (Meter): UNCASED CHIP;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE321000 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Nec Electronics America

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

Minimum DS Breakdown Voltage:

3 V

Maximum Drain Current (ID):

.015 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

X BAND

JESD-30 Code:

R-XUUC-N4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Minimum Power Gain (Gp):

12 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

NE321000 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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