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BF909WR-TAPE-13

NXP Semiconductors

BF909WR-TAPE-13 by NXP Semiconductors

BF909WR-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. Ideal for compact surface mount designs, it ensures reliable performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,820 parts In-Stock

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3,820

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Anansix

USA . 2,235 parts In-Stock

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2,235

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Digiode

USA . 395 parts In-Stock

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395

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Distributors (Availability)

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Native Components

USA . 738 parts In-Stock

1+ parts

$0.924

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738

$0.924

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Northwest PG Solutions

USA . 1,927 parts In-Stock

1+ parts

$1.016

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1,927

$1.016

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One Stop Electronics

USA . 1,107 parts In-Stock

1+ parts

$28.050

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1,107

$28.050

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UNI Independent Distributors

Spain . 3,130 parts In-Stock

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3,130

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Corphita

USA . 1,327 parts In-Stock

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1,327

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Overview

Elevate your designs with the BF909WR-TAPE-13 from NXP Semiconductors, where quality meets innovation. This high-performance RF Small Signal FET delivers exceptional amplification in compact applications, making it a perfect choice for modern electronics. With its advanced dual-gate enhancement mode and robust construction, you can trust NXP's excellence to enhance reliability and efficiency in your projects, ensuring superior performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making this FET suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their higher efficiency and better performance in amplification, making them ideal for high-speed and high-frequency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides added functionality and protection, which enhances circuit reliability and efficiency.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET is well-suited for use in audio and RF applications, delivering superior performance.

Surface Mount: YES

Surface mount capability allows for compact circuit designs and efficient manufacturing processes, making it a versatile choice for modern electronic devices.

Minimum DS Breakdown Voltage: 7 V

A minimum breakdown voltage of 7 V ensures that the transistor can handle moderate voltage applications, ensuring robust performance in various environments.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCB layouts, facilitating easier integration into compact designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability during soldering, ensuring reliable connections in electronic assemblies.

Operating Mode: DUAL GATE, ENHANCEMENT MODE

Dual gate design allows for better control over the operation, providing higher gain and improved linearity in amplifier applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, this FET is suitable for a wide range of RF applications, including telecommunications.

No. of Terminals: 4

With 4 terminals, this FET offers simple connectivity and integration into circuits, making it easy to use in various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to reduced space requirements on PCB, promoting compact and efficient designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures low power consumption and high-speed operation, making this FET a preferred choice for modern electronics.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliable performance in demanding environments, increasing application versatility.

Transistor Element Material: SILICON

Silicon material provides excellent properties for FET operation, ensuring stability and performance in various electronic applications.

Maximum Drain Current (ID): 0.04 A

A maximum drain current of 0.04 A makes it suitable for low to moderate power applications, ensuring efficiency in design.

Terminal Position: DUAL

Dual terminal positioning allows for easy routing of signals on PCBs, enhancing design flexibility and integration.

Case Connection: SOURCE

Direct source connection simplifies circuit design, making it easier to implement in amplifier configurations.

Maximum Feedback Capacitance (Crss): 0.05 pF

A low maximum feedback capacitance of 0.05 pF contributes to high-frequency performance, minimizing signal distortion and loss.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF909WR-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

7 V

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.05 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF909WR-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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