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PMBFJ309,215

NXP Semiconductors

PMBFJ309,215 by NXP Semiconductors

NXP Semiconductors' PMBFJ309,215 is an N-CHANNEL RF FET for AMPLIFIER applications. Features include 25V DS Breakdown Voltage, VERY HIGH FREQUENCY BAND operation, and 2.5pF Crss feedback capacitance. The PLASTIC/EPOXY package with GULL WING terminals supports surface mount installation.

Median Price

$0.191

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 57 parts In-Stock

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$0.191

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57

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Vyrian

USA . 5,104 parts In-Stock

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5,104

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Digiode

USA . 3,290 parts In-Stock

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3,290

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Anansix

USA . 543 parts In-Stock

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543

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Continental Prestige Electronics

USA . 806 parts In-Stock

1+ parts

$0.271

100+ parts

$0.179

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$0.102

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806

$0.271

$0.179

$0.102

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Aztec Data Supply Inc.

USA . 799 parts In-Stock

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$0.620

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799

$0.620

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Corohmni

South Africa . 104 parts In-Stock

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$1.764

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104

$1.764

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AZTECH Wire

Italy . 641 parts In-Stock

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$7.209

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641

$7.209

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Semicontronic

India . 982 parts In-Stock

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$16.050

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$15.649

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$15.568

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982

$16.050

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$15.568

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One Stop Electronics

USA . 1,031 parts In-Stock

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$34.050

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Perfect Parts

USA . 68,630 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,364 parts In-Stock

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Corphita

USA . 4,675 parts In-Stock

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Argo Parts USA

USA . 2,209 parts In-Stock

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UNI Independent Distributors

Spain . 499 parts In-Stock

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Microchip USA

USA . 305 parts In-Stock

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Overview

Experience superior performance with the PMBFJ309,215 from NXP Semiconductors, a leading manufacturer in the industry. This RF Small Signal Field Effect Transistor (FET) is perfect for amplifier applications, offering high-quality and reliability. Its N-CHANNEL configuration and very high frequency band make it ideal for a wide range of electronic devices. With a small outline package style and maximum power dissipation of 0.25W, this transistor provides exceptional value and benefits to customers looking for top-notch performance in their designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, making them suitable for high-frequency applications such as amplifiers.

Configuration: SINGLE

Single configuration means simpler circuit design and easier integration into electronic devices.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high performance and efficiency in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this transistor can handle high voltage levels, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

Rectangular package shape provides easy mounting and efficient use of space on the PCB.

Terminal Form: GULL WING

Gull wing terminals offer secure soldering connections and improved thermal performance, ensuring reliability in operation.

Operating Mode: DEPLETION MODE

Depletion mode operation provides better control over current flow, making this transistor suitable for certain specialized applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high-frequency operations, this transistor is ideal for applications requiring fast signal processing.

No. of Terminals: 3

Three terminals provide the necessary connections for input, output, and control, enabling versatile usage in various circuit configurations.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, this transistor can handle moderately high power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact and efficient device design.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high performance and reliability, making this transistor suitable for demanding applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring stable performance in various conditions.

Transistor Element Material: SILICON

Silicon material provides excellent semiconductor properties, ensuring high efficiency and reliability in electronic circuits.

Terminal Finish: TIN

Tin terminal finish offers good solderability and corrosion resistance, ensuring long-term reliability in the connection.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and easier connections for different applications.

Maximum Time At Peak Reflow Temperature (s): 30

Designed to withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering and long-term performance.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand the soldering process without damage, ensuring reliable manufacturing.

Maximum Feedback Capacitance (Crss): 2.5 pF

Low feedback capacitance of 2.5pF minimizes signal distortion and ensures high-frequency performance in amplifier applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PMBFJ309,215 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PMBFJ309,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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