Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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PMBF4416A-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 35V min DS breakdown voltage, operates in depletion mode, and supports ultra-high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
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The use of plastic/epoxy material ensures durability and reliability, making this FET suitable for various applications.
N-channel transistors typically offer better efficiency and performance in amplification, which enhances overall device functionality.
A single configuration simplifies design requirements and is ideal for scaling applications, reducing component count.
Designed specifically for amplification, this FET is optimized for high-quality signal transmission, making it ideal for audio and radio applications.
Surface mount technology allows for more compact circuit designs and improves assembly efficiency, ideal for modern electronics.
A minimum breakdown voltage of 35 V ensures reliability in high-voltage applications, providing additional safety and longevity.
The rectangular package shape facilitates efficient space utilization on PCB, enhancing layout flexibility.
Gull wing terminals provide excellent soldering and mechanical strength, ensuring robust connections in surface-mount applications.
Depletion mode operation allows for low-power consumption and increased control over current flow, making it suitable for power-sensitive applications.
Being capable of ultra-high frequency operation allows this FET to be used in advanced communication systems and high-frequency applications.
With three terminals, this FET simplifies circuit integration while providing necessary functional connections in compact designs.
The small outline package style aids in miniaturization of electronic devices, making it an attractive option for space-constrained applications.
Junction technology enhances stability and performance under various conditions, making this FET versatile in different environments.
High operating temperature tolerance increases the reliability and applicability of the FET in demanding environments.
Silicon technology provides good performance characteristics and thermal conductivity, making this FET highly efficient.
Dual terminal positioning enhances flexibility in layout and design, facilitating easier integration into complex systems.
Low feedback capacitance minimizes signal losses and enhances bandwidth, making this FET ideal for high-speed applications.
RF Small Signal Field Effect Transistors (FET) PMBF4416A-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
PMBF4416A-TAPE-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LM317AEMP/NOPB
Texas Instruments
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
M24308/2-1F
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
BAV99
Plessey Semiconductors Discrete Components Div
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
MBRS1100T3G
Onsemi
MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.
2N2222A
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Defense Logistics Agency
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;
2N7002
Rectron
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
Zetex Plc
1N4148WT
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
SS14
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
MBRS340T3G
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
SS14+
Multicomp Pro
SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.
BF244ARL
BF244ARL by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package PLASTIC/EPOXY, Shape ROUND, Terminals 3.
MMBF4416
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: JUNCTION;
BFR29
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Case Connection: SUBSTRATE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N3823
2N3823 by Texas Instruments is an N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.3W power dissipation at 200°C max temp.
BF990AR-TAPE-13
BF990AR-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 18V, operates in dual gate depletion mode, and supports ultra-high frequency bands. This surface-mount transistor ensures reliable performance up to 150 °C.
BF1206
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
BF908WR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .045 pF; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
2N5484-AMMO
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel; Terminal Position: BOTTOM;
BLF8G20LS-140GV
RF Small Signal Field-Effect Transistors;
3N128
3N128 by Texas Instruments is a N-CHANNEL FET with 20V DS Breakdown Voltage, 13.5 dB Power Gain, and 0.05A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its DEPLETION MODE operation and METAL-OXIDE SEMICONDUCTOR technology.
BLS7G2731LS-220P
N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;
BLF184XRU
Ampleon Netherlands B V
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F4;
2N5247
2N5247 by Texas Instruments is a N-CHANNEL FET with 10 dB Gp, operating in DEPLETION MODE. It's used as an AMPLIFIER in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.36 W and Crss of 1 pF, it's ideal for RF applications.
934020440215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 4; Terminal Position: DUAL;
TGF2023-2-01
Triquint Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED; No. of Elements: 1;
934002640235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
BF901R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
934057514135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
BF991
Philips Components
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
BF998RE6327HTSA1
Infineon Technologies
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
PMBFJ309,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;
PMBFJ308,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; No. of Elements: 1;
PMBF5484TRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON; No. of Elements: 1;
PMBF4416A-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Field Effect Transistor Technology: JUNCTION;
PMBF4416TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): .8 pF; Terminal Position: DUAL;
PMBF5484T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; Transistor Application: AMPLIFIER;
PMBF4416-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: LOW NOISE; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON;
PMBF5485
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL;
PMBF4416A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 35 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
PMBF4416TRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .8 pF; Terminal Position: DUAL; Qualification: Not Qualified;
PMBF4416AT/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Application: AMPLIFIER; No. of Terminals: 3;
PMBF5484
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Application: AMPLIFIER; Additional Features: LOW NOISE;
PMBF5484-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 1 pF; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;
PMBF4416-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
PMBF5484TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Transistor Application: AMPLIFIER; No. of Terminals: 3;
PMBF5484-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 25 V; Transistor Element Material: SILICON;
PMBF4416T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified; Transistor Element Material: SILICON;
PMBF4416
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 3; Operating Mode: DEPLETION MODE;
PMBF4416A-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Terminal Position: DUAL; No. of Elements: 1;
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