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PMBF4416-TAPE-13

NXP Semiconductors

PMBF4416-TAPE-13 by NXP Semiconductors

PMBF4416-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports ultra-high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,620 parts In-Stock

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4,620

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Digiode

USA . 2,199 parts In-Stock

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2,199

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Anansix

USA . 1,815 parts In-Stock

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1,815

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 314 parts In-Stock

1+ parts

$35.050

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314

$35.050

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Corphita

USA . 3,005 parts In-Stock

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3,005

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UNI Independent Distributors

Spain . 222 parts In-Stock

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222

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Overview

Elevate your designs with the PMBF4416-TAPE-13 from NXP Semiconductors—a trusted leader in innovation. This premium RF small signal FET is crafted to deliver exceptional performance for amplifying applications, boasting superior reliability and efficiency. Its compact surface-mount design fits seamlessly into your projects while ensuring ultra-high frequency operation. Experience the unmatched quality and engineering excellence that only NXP can provide, empowering your next breakthrough!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental stresses, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for higher electron mobility, which typically leads to better performance in amplification applications.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it an ideal choice for compact applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor excels in boosting signal strength in RF applications, ensuring high performance.

Surface Mount: YES

Surface mount capability allows for automated assembly processes, reducing manufacturing costs and facilitating compact circuit designs.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this FET is suitable for medium voltage applications, providing a reliable choice for various circuitry.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space efficiency on PCB layouts, facilitating easier design integration.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering and reliability, ensuring a secure connection in diverse applications.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for low power consumption and improved performance in specific applications where signal control is crucial.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Being suitable for ultra high frequency applications makes this FET ideal for communication systems and high-speed circuits.

No. of Terminals: 3

A 3-terminal configuration allows for simplified circuit designs, providing ease of use while maintaining functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style is designed for compactness, allowing for efficient use of board space in modern electronics.

Field Effect Transistor Technology: JUNCTION

Junction technology ensures high reliability and performance, especially in high-frequency and high-speed applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C indicates robust thermal performance, making this device suitable for demanding environments.

Transistor Element Material: SILICON

Silicon as the element material is widely used for its excellent semiconductor properties and is cost-effective, enhancing the product's appeal.

Terminal Position: DUAL

Dual terminal positions enhance connection options, increasing versatility in circuit design and layout flexibility.

Maximum Feedback Capacitance (Crss): 0.8 pF

Low feedback capacitance minimizes signal loss and distortion, improving overall circuit performance and reliability.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PMBF4416-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.8 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PMBF4416-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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