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ATF-36077-STR

Broadcom

ATF-36077-STR by Broadcom

Broadcom's ATF-36077-STR is an N-channel RF FET with 3V DS breakdown voltage and 11dB power gain, ideal for X-band applications. Featuring a ceramic-metal package, it operates in depletion mode with a max temp of 150°C. Suitable for amplifiers, this transistor has a flat terminal form and gold finish.

Median Price

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Digiode

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Nova Conductors

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LWI Electronics Inc

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Decca Corp

Germany . 273 parts In-Stock

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$15.680

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$15.523

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Component Stockers USA

USA . 322 parts In-Stock

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Argo Parts USA

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Glotronic Ltd.

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Continental Prestige Electronics

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Perfect Parts

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Corphita

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Overview

Unlock the power of cutting-edge technology with the ATF-36077-STR RF Small Signal Field Effect Transistor by Broadcom. Manufactured with precision and expertise, this N-CHANNEL transistor boasts high electron mobility technology for superior performance in amplifier applications within the X BAND frequency range. With a minimum DS breakdown voltage of 3V and a minimum power gain of 11dB, this product delivers unparalleled quality and reliability. Experience enhanced functionality and efficiency with the ATF-36077-STR, providing customers with value and benefits that exceed expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent thermal conductivity and durability, ensuring reliable performance in high temperature environments.

Polarity or Channel Type: N-CHANNEL

N-Channel Field Effect Transistors typically have higher mobility and lower resistance compared to P-Channel transistors, making them ideal for high frequency applications.

Minimum Power Gain (Gp): 11 dB

Higher power gain allows for amplification of weak signals without introducing significant noise, improving overall signal quality.

Transistor Element Material: GALLIUM ARSENIDE

Gallium Arsenide provides better performance at high frequencies, making this transistor suitable for X Band applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, making it suitable for demanding environments.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-36077-STR attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

3 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

X BAND

JESD-30 Code:

O-CRDB-F4

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.18 W

Minimum Power Gain (Gp):

11 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

ATF-36077-STR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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