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ATF-36163-TR1G

Broadcom

ATF-36163-TR1G by Broadcom

Broadcom's ATF-36163-TR1G is an N-channel RF FET for amplifier applications. With a power gain of 9.4 dB, it operates in depletion mode up to 150°C. This GaAs transistor has a max drain current of 0.04 A and is designed for Ku band frequencies.

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AZTECH Wire

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Overview

Enhance your RF amplifier performance with the ATF-36163-TR1G by Broadcom. Manufactured with precision and expertise, this N-CHANNEL FET offers unparalleled power gain and reliability in the KU BAND frequency range. Ideal for various applications, including amplifiers, this transistor boasts a compact design with high electron mobility technology. Trust in Broadcom's reputation for quality and innovation, and experience the exceptional value and benefits that the ATF-36163-TR1G brings to your projects. Elevate your RF small signal applications with this top-of-the-line transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and faster switching speeds, making them ideal for high-frequency applications such as amplifiers.

Minimum Power Gain (Gp): 9.4 dB

With a minimum power gain of 9.4 dB, this transistor can amplify signals efficiently without significant signal loss.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easy to implement in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for challenging environments.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology ensures fast switching speeds and high-frequency operation, making this transistor suitable for amplifier applications in the KU band.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-36163-TR1G attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

3 V

Maximum Drain Current (Abs) (ID):

.04 A

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.18 W

Minimum Power Gain (Gp):

9.4 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

ATF-36163-TR1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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