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ATF-35143-TR1G

Broadcom

ATF-35143-TR1G by Broadcom

Broadcom's ATF-35143-TR1G is an N-channel FET with 5.5V DS breakdown voltage and 16.5dB power gain, ideal for amplifier applications in L Band frequencies. It features a small outline package with gull wing terminals, high electron mobility technology, and operates in enhancement mode up to 160°C ambient temperature.

Median Price

$1.416

Lifecycle Status

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5

In-Stock Inventory

1k+

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Nova Conductors

Japan . 100 parts In-Stock

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$1.416

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Digiode

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Vyrian

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North Shore Components

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Aztec Data Supply Inc.

USA . 4,945 parts In-Stock

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$0.410

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Argo Parts USA

USA . 1,149 parts In-Stock

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Continental Prestige Electronics

USA . 1,141 parts In-Stock

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$1.388

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Netroflash

USA . 50 parts In-Stock

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$1.416

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Corohmni

South Africa . 325 parts In-Stock

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$1.648

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AZTECH Wire

Italy . 240 parts In-Stock

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Decca Corp

Germany . 1,093 parts In-Stock

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Lixinc

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A-Z Elektronik GmbH

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Kepictronics

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RC Electronics

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Alle Elektronik GmbH

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Assy Fe

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Supply Digital

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Microchip USA

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Corphita

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Overview

Experience unparalleled performance with the ATF-35143-TR1G from Broadcom, a leading manufacturer in RF Small Signal Field Effect Transistors. This N-CHANNEL transistor offers exceptional power gain and operates at high frequencies, making it ideal for amplifier applications in the L BAND. With its compact design and reliable performance, this transistor provides customers with a valuable solution for their electronic needs. Upgrade your project with the ATF-35143-TR1G and enjoy the benefits of top-notch technology from Broadcom.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Makes the product durable and cost-effective.

Polarity or Channel Type

N-CHANNEL - Offers efficient signal amplification.

Configuration

SINGLE - Simplifies circuit design and integration.

Transistor Application

AMPLIFIER - Ideal for signal amplification applications.

Surface Mount

YES - Enables easy and convenient PCB assembly.

Minimum DS Breakdown Voltage

5.5 V - Ensures reliable operation under varying conditions.

Minimum Power Gain (Gp)

16.5 dB - Provides high signal amplification capability.

Package Shape

RECTANGULAR - Allows for compact and efficient PCB layout.

Terminal Form

GULL WING - Facilitates secure and reliable soldering connections.

Operating Mode

ENHANCEMENT MODE - Ensures stable and predictable performance.

Highest Frequency Band

L BAND - Suitable for high-frequency signal processing.

No. of Terminals

4 - Simplifies connectivity and integration within the circuit.

Package Style (Meter)

SMALL OUTLINE - Saves space and enhances portability.

Field Effect Transistor Technology

HIGH ELECTRON MOBILITY - Offers superior performance in signal amplification.

Maximum Power Dissipation Ambient

0.3 W - Ensures efficient power management and heat dissipation.

Maximum Operating Temperature

160 °C - Suitable for a wide range of operating environments.

Transistor Element Material

SILICON - Provides reliable and consistent performance.

Terminal Finish

MATTE TIN - Enhances solder joint integrity and corrosion resistance.

Terminal Position

DUAL - Allows for versatile PCB layout and connection options.

Case Connection

SOURCE - Facilitates efficient signal routing and management.

Maximum Time At Peak Reflow Temperature (s)

20 - Ensures safe and effective solder reflow process.

Peak Reflow Temperature °C

260 - Enables reliable and secure solder connections.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-35143-TR1G attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

5.5 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

160 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.3 W

Minimum Power Gain (Gp):

16.5 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signals

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

ATF-35143-TR1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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