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2N5486RLRE

Onsemi

2N5486RLRE by Onsemi

2N5486RLRE by Onsemi is an N-CHANNEL RF FET with a single configuration for AMPLIFIER applications. It offers a Min Power Gain of 10 dB and operates in DEPLETION MODE at up to 150 °C. This ULTRA HIGH FREQUENCY transistor has a Max Drain Current of 0.03 A and Max Feedback Capacitance of 1 pF, making it suitable for high-frequency amplification needs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,363 parts In-Stock

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Digiode

USA . 1,075 parts In-Stock

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1,075

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Native Components

USA . 790 parts In-Stock

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$16.698

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790

$16.698

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Northwest PG Solutions

USA . 377 parts In-Stock

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$18.367

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$16.531

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377

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Kulean Microsystems

USA . 7,283 parts In-Stock

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Problanco Electronics

Mexico . 3,812 parts In-Stock

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SupplyDigital Components

Austria . 3,162 parts In-Stock

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Corphita

USA . 1,930 parts In-Stock

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TANS Electronics

Latvia . 1,906 parts In-Stock

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Corohmni

South Africa . 405 parts In-Stock

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UHIMA Technologies

Türkiye . 35 parts In-Stock

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Overview

Elevate your RF signal amplification with the 2N5486RLRE by Onsemi. Designed for ultra-high frequency applications, this N-CHANNEL FET offers a minimum power gain of 10 dB, ensuring optimal performance in amplifier circuits. Manufactured by Onsemi, a leader in semiconductor technology, you can trust in the quality and reliability of this product. Whether you're working on communication systems or radar equipment, the 2N5486RLRE provides unmatched value and efficiency, making it a must-have component for your projects. Experience enhanced signal processing and seamless integration with this top-of-the-line transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are more common and widely used in various applications, making this product compatible with many systems.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Minimum Power Gain (Gp): 10 dB

High minimum power gain of 10 dB indicates strong amplification capabilities.

Package Shape: ROUND

Round package shape allows for easy installation and handling.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering.

Operating Mode: DEPLETION MODE

Depletion mode operation offers control over current flow, enhancing versatility.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, ensuring compatibility with high-speed systems.

No. of Terminals: 3

3 terminals provide necessary connections for efficient operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compactness and space-saving design.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high performance and reliability in amplification.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows for reliable operation in various environments.

Transistor Element Material: SILICON

Silicon material ensures stability and efficiency of the transistor element.

Maximum Drain Current (ID): 0.03 A

Maximum drain current of 0.03 A indicates high current-carrying capacity for enhanced performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy installation and connections.

Maximum Feedback Capacitance (Crss): 1 pF

Low feedback capacitance of 1 pF ensures minimal interference and distortion in signal amplification.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5486RLRE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5486RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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