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Broadcom RF Small Signal Field Effect Transistors (FET) 6

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
ATF-53189-BLK by Broadcom

ATF-53189-BLK

Broadcom

Broadcom ATF-53189-BLK is an N-channel FET with 14 dB power gain, ideal for amplifier applications in C band. It has a 7V breakdown voltage, 0.3A drain current, and operates in enhancement mode. The transistor features high electron mobility technology, a max power dissipation of 1W, and can withstand temperatures up to 150°C.

LOW NOISE

SOURCE

SINGLE

7 V

.3 A

.3 A

HIGH ELECTRON MOBILITY

C BAND

R-PSSO-F3

e3

2

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1 W

14 dB

Not Qualified

FET RF Small Signals

YES

MATTE TIN

FLAT

SINGLE

AMPLIFIER

SILICON

ATF-53189-TR1 by Broadcom

ATF-53189-TR1

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 1; Highest Frequency Band: C BAND;

LOW NOISE

SOURCE

SINGLE

7 V

.3 A

.3 A

HIGH ELECTRON MOBILITY

C BAND

R-PSSO-F3

e3

2

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1 W

14 dB

Not Qualified

FET RF Small Signals

YES

MATTE TIN

FLAT

SINGLE

AMPLIFIER

SILICON

VMMK-1218-BLKG by Broadcom

VMMK-1218-BLKG

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Transistor Element Material: GALLIUM ARSENIDE; Operating Mode: ENHANCEMENT MODE;

SOURCE

SINGLE

5 V

.1 A

.1 A

HIGH ELECTRON MOBILITY

KU BAND

R-XBCC-N3

e3

1

1

3

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.3 W

6.7 dB

Not Qualified

FET RF Small Signal

YES

MATTE TIN

NO LEAD

BOTTOM

AMPLIFIER

GALLIUM ARSENIDE

VMMK-1218-TR1G by Broadcom

VMMK-1218-TR1G

Broadcom

Broadcom's VMMK-1218-TR1G is an N-channel RF FET with a min DS breakdown voltage of 5V and power gain of 6.7dB, ideal for amplifier applications in the Ku band. This single configuration transistor operates in enhancement mode, with a max drain current of 0.1A and high electron mobility technology for efficient performance.

SOURCE

SINGLE

5 V

.1 A

.1 A

HIGH ELECTRON MOBILITY

KU BAND

R-XBCC-N3

e3

1

1

3

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.3 W

6.7 dB

Not Qualified

FET RF Small Signal

YES

MATTE TIN

NO LEAD

BOTTOM

AMPLIFIER

GALLIUM ARSENIDE

VMMK-1225-BLKG by Broadcom

VMMK-1225-BLKG

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .25 W; Terminal Position: DUAL; Qualification: Not Qualified;

SOURCE

SINGLE

5 V

.05 A

.05 A

HIGH ELECTRON MOBILITY

L BAND

R-XDCC-N8

e3

1

1

8

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.25 W

8.7 dB

Not Qualified

FET RF Small Signal

YES

TIN

NO LEAD

DUAL

AMPLIFIER

GALLIUM ARSENIDE

VMMK-1225-TR1G by Broadcom

VMMK-1225-TR1G

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: NO LEAD; Transistor Application: AMPLIFIER; No. of Terminals: 8;

SOURCE

SINGLE

5 V

.05 A

.05 A

HIGH ELECTRON MOBILITY

L BAND

R-XDCC-N8

e3

1

1

8

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.25 W

8.7 dB

Not Qualified

FET RF Small Signal

YES

TIN

NO LEAD

DUAL

AMPLIFIER

GALLIUM ARSENIDE