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BLF221B

NXP Semiconductors

BLF221B by NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.4 W; Maximum Drain Current (Abs) (ID): 1 A; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,813 parts In-Stock

1+ parts

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4,813

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Digiode

USA . 2,589 parts In-Stock

1+ parts

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2,589

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Anansix

USA . 925 parts In-Stock

1+ parts

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925

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 896 parts In-Stock

1+ parts

$0.216

100+ parts

-

1k+ parts

-

10k+ parts

$0.208

896

$0.216

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-

$0.208

Northwest PG Solutions

USA . 969 parts In-Stock

1+ parts

$0.238

100+ parts

-

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$0.210

969

$0.238

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$0.210

One Stop Electronics

USA . 1,056 parts In-Stock

1+ parts

$25.050

100+ parts

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1,056

$25.050

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UNI Independent Distributors

Spain . 5,974 parts In-Stock

1+ parts

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5,974

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Corphita

USA . 3,813 parts In-Stock

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3,813

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) BLF221B attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

7.4 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

9 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF221B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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