Loading...

BLF202

NXP Semiconductors

BLF202 by NXP Semiconductors

BLF202 by NXP Semiconductors is an N-CHANNEL RF FET with a 40V DS Breakdown Voltage and 10 dB Power Gain, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at VERY HIGH FREQUENCY BAND, with a max Drain Current of 1A and Power Dissipation of 5.7W in a SMALL OUTLINE package.

Median Price

$38.390

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,500 parts In-Stock

1+ parts

$38.390

100+ parts

$36.090

1k+ parts

$33.780

10k+ parts

-

1,500

$38.390

$36.090

$33.780

-

DigiKey

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 539 parts In-Stock

1+ parts

$38.589

100+ parts

-

1k+ parts

-

10k+ parts

-

539

$38.589

-

-

-

Vyrian

USA . 137 parts In-Stock

1+ parts

$40.620

100+ parts

-

1k+ parts

-

10k+ parts

-

137

$40.620

-

-

-

Anansix

USA . 2,497 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,497

-

-

-

-

DigiKey Marketplace

USA . 1,509 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,509

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,462 parts In-Stock

1+ parts

$36.558

100+ parts

-

1k+ parts

-

10k+ parts

-

1,462

$36.558

-

-

-

Microchip USA

USA . 8,082 parts In-Stock

1+ parts

$71.760

100+ parts

$70.510

1k+ parts

$69.890

10k+ parts

$69.260

8,082

$71.760

$70.510

$69.890

$69.260

UNI Independent Distributors

Spain . 3,668 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,668

-

-

-

-

Native Components

USA . 877 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

877

-

-

-

-

Northwest PG Solutions

USA . 717 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

717

-

-

-

-

Overview

Elevate your RF signal amplification with the BLF202 by NXP Semiconductors. Crafted with precision and quality, this small signal Field Effect Transistor offers unparalleled performance in amplifier applications. Designed with a ceramic, metal-sealed package body, this N-Channel transistor operates in enhancement mode at very high frequencies, ensuring optimal power gain and efficiency. With a maximum power dissipation of 5.7 W and a minimum DS breakdown voltage of 40 V, the BLF202 delivers reliable and consistent results for all your RF needs. Experience the superior technology and value that NXP Semiconductors brings to the table with the BLF202.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides high durability and reliability, ideal for applications that require robust components.

Polarity or Channel Type: N-CHANNEL

Enables efficient current flow in one direction, optimizing performance in amplifier applications.

Minimum DS Breakdown Voltage: 40 V

Ensures the transistor can handle higher voltages, making it suitable for a variety of amplifier setups.

Minimum Power Gain (Gp): 10 dB

Offers a good level of amplification for efficient signal processing in the circuit.

Surface Mount: YES

Enables easy installation on circuit boards, saving time and effort during assembly.

Maximum Power Dissipation (Abs): 5.7 W

Allows for higher power handling capacity, making it reliable for applications requiring high performance.

Maximum Operating Temperature: 200 °C

Ensures stable operation even in high-temperature environments, enhancing overall reliability.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BLF202 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-CDSO-G8

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF202 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-514-4881, 5961015144881

NIIN

015144881

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4