Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BF244AZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
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UHIMA Technologies
Northwest PG Solutions
Native Components
Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for various applications.
N-Channel transistors generally have better performance characteristics compared to P-Channel transistors, making this product a good choice for amplification purposes.
Single configuration simplifies the design and implementation process, making it easier to integrate this transistor into a circuit.
Designed specifically for amplifier applications, this transistor offers high performance and reliability in amplifying signals.
With a minimum breakdown voltage of 30 V, this transistor can handle higher voltages, providing a safe operating range for different applications.
Round package shape allows for easy mounting and handling, making it convenient for assembly and integration.
Through-hole terminals provide secure connections and easy soldering, ensuring a reliable connection in a circuit.
Depletion mode operation allows for better control and modulation of the transistor, offering enhanced performance in amplification.
Designed for ultra-high frequency applications, this transistor provides excellent performance in high-speed signal processing.
With 3 terminals, this transistor is easy to integrate into a circuit and provides flexibility in connectivity options.
Cylindrical package style offers compact size and efficient heat dissipation, making it suitable for space-constrained applications.
Junction technology provides good efficiency and performance in signal amplification, making this transistor a reliable choice for various applications.
Silicon material offers high reliability, stability, and performance in electronic devices, ensuring long-term functionality of the transistor.
Tin lead terminal finish provides good solderability and conductivity, ensuring a reliable connection and easy assembly.
With a maximum drain current of 0.1 A, this transistor can handle moderate current loads, making it suitable for low-power amplification applications.
Bottom terminal position allows for easy mounting and secure connections, enhancing the usability and reliability of the transistor.
RF Small Signal Field Effect Transistors (FET) BF244AZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
BF244AZL1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
LM107H/883C
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
KSZ9031RNXIA
Microchip Technology
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
SMBJ18CA
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
CRGCQ0805F10R
TE Connectivity
TE Connectivity's CRGCQ0805F10R is a 10 ohm fixed resistor with 1% tolerance and 400 ppm/°C temperature coefficient. It is a surface mount thick film resistor in an 0805 package, suitable for applications requiring precise resistance values in compact electronic circuits.
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
World Products
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317TG
Onsemi
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Hi-tron Semiconductor
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
LM107H
Linear Technology
LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.
Hy Electronic
MBR0520LT3G
MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.
Silicon Transistor
934055823135
NXP Semiconductors
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Maximum Feedback Capacitance (Crss): .05 pF; Package Style (Meter): SMALL OUTLINE;
BLM7G1822S-40PBG
RF Small Signal Field-Effect Transistors;
BF244
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF511-TAPE-13
BF511-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequencies. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF998,235
BF998,235 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in DEPLETION MODE and has a max ID of 0.03A. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this transistor features a GULL WING terminal form and can handle up to 0.2W power dissipation.
BF545B,215
BF545B,215 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications, this transistor comes in a PLASTIC/EPOXY package with GULL WING terminals.
ATF-34143-TR1G
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 160 Cel;
2N4416A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Operating Mode: DEPLETION MODE;
NE3210S01-T1B-A
Renesas Electronics
N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;
BF990AR-TAPE-7
BF990AR-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 18V, operates in dual gate depletion mode, and supports ultra-high frequency bands. This compact surface mount device ensures reliable performance up to 150 °C.
2N3823UB
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; JESD-30 Code: R-CDSO-N3;
2N4416
Inter F E T
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; JESD-30 Code: O-MBCY-W4;
FLU17XM
Fujitsu
FLU17XM by Fujitsu is an N-CHANNEL RF FET with 15V DS Breakdown Voltage. Operating in DEPLETION MODE, it supports L BAND frequencies and has a max power dissipation of 7.5W at 175°C. Ideal for microwave applications due to its CERAMIC, METAL-SEALED COFIRED package body material and SOURCE case connection.
BLF8G20LS-140GV
Linear Integrated Systems
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Operating Mode: DEPLETION MODE;
BF1212,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Elements: 1; Terminal Position: DUAL;
MPF102ZL1
MPF102ZL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at up to 125 °C. Featuring a VERY HIGH FREQUENCY BAND, this transistor has 3 terminals and a max Crss of 3pF.
D2081UK
Tt Electronics Plc
D2081UK by Tt Electronics Plc is an N-CHANNEL RF Small Signal FET for AMPLIFIER applications. It features a 65V DS Breakdown Voltage, 11 dB Power Gain, and operates in ENHANCEMENT MODE at up to 150°C. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for high-performance RF amplification needs.
934063997115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 6 V;
BF244BRL
BF244BRL by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It features SINGLE configuration, 0.1A ID, and DEPLETION MODE operation in a CYLINDRICAL package with TIN LEAD finish.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
BF244B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Operating Mode: DEPLETION MODE; Package Shape: ROUND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .05 A; JEDEC-95 Code: TO-92;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
Micro Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): CYLINDRICAL; Qualification: Not Qualified;
BF245C
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; No. of Terminals: 3; Terminal Finish: TIN SILVER COPPER;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; JESD-609 Code: e0;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): CYLINDRICAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): CYLINDRICAL; Field Effect Transistor Technology: JUNCTION;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-T3; Package Style (Meter): CYLINDRICAL;
BF247A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-W3; Field Effect Transistor Technology: JUNCTION;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-92;
BF244BRL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Position: BOTTOM; Transistor Application: AMPLIFIER;
BF244ARLRP
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Qualification: Not Qualified; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF244BRLRA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Elements: 1; JEDEC-95 Code: TO-92;
BF244BRLRE
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3; Maximum Drain Current (ID): .1 A;
BF244ARL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: JUNCTION; Terminal Finish: TIN LEAD;
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