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BF244AZL1

Onsemi

BF244AZL1 by Onsemi

BF244AZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

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Kulean Microsystems

USA . 7,286 parts In-Stock

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SupplyDigital Components

Austria . 3,946 parts In-Stock

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Problanco Electronics

Mexico . 2,586 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 473 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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UHIMA Technologies

Türkiye . 245 parts In-Stock

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Northwest PG Solutions

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Overview

Unlock the potential of your electronic projects with the BF244AZL1 from Onsemi. This RF Small Signal Field Effect Transistor offers top-notch quality and performance, backed by a trusted manufacturer. Ideal for amplifier applications in the ultra-high frequency band, this N-channel transistor in a plastic/epoxy package delivers reliability and efficiency. With a minimum DS breakdown voltage of 30V and a maximum drain current of 0.1A, the BF244AZL1 provides unmatched value and benefits to customers seeking optimal performance in their designs. Upgrade your projects with this high-quality component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors generally have better performance characteristics compared to P-Channel transistors, making this product a good choice for amplification purposes.

Configuration: SINGLE

Single configuration simplifies the design and implementation process, making it easier to integrate this transistor into a circuit.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and reliability in amplifying signals.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this transistor can handle higher voltages, providing a safe operating range for different applications.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, making it convenient for assembly and integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring a reliable connection in a circuit.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for better control and modulation of the transistor, offering enhanced performance in amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, this transistor provides excellent performance in high-speed signal processing.

No. of Terminals: 3

With 3 terminals, this transistor is easy to integrate into a circuit and provides flexibility in connectivity options.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact size and efficient heat dissipation, making it suitable for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Junction technology provides good efficiency and performance in signal amplification, making this transistor a reliable choice for various applications.

Transistor Element Material: SILICON

Silicon material offers high reliability, stability, and performance in electronic devices, ensuring long-term functionality of the transistor.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring a reliable connection and easy assembly.

Maximum Drain Current (ID): 0.1 A

With a maximum drain current of 0.1 A, this transistor can handle moderate current loads, making it suitable for low-power amplification applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and secure connections, enhancing the usability and reliability of the transistor.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF244AZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF244AZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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