Loading...

BF245BRLRA

Onsemi

BF245BRLRA by Onsemi

BF245BRLRA by Onsemi is an N-CHANNEL RF FET with a 30V DS breakdown voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,733 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,733

-

-

-

-

Vyrian

USA . 1,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,316

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 750 parts In-Stock

1+ parts

$22.706

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$22.706

-

-

-

Northwest PG Solutions

USA . 1,297 parts In-Stock

1+ parts

$24.976

100+ parts

$22.479

1k+ parts

-

10k+ parts

-

1,297

$24.976

$22.479

-

-

SupplyDigital Components

Austria . 3,799 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,799

-

-

-

-

Problanco Electronics

Mexico . 3,093 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,093

-

-

-

-

TANS Electronics

Latvia . 2,139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,139

-

-

-

-

Corphita

USA . 1,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,512

-

-

-

-

Kulean Microsystems

USA . 632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

632

-

-

-

-

Corohmni

South Africa . 290 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

290

-

-

-

-

UHIMA Technologies

Türkiye . 173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

173

-

-

-

-

Overview

Discover the cutting-edge BF245BRLRA RF Small Signal Field Effect Transistor by Onsemi, designed for high-performance amplifier applications in the ultra-high frequency band. Crafted with precision using top-tier materials and technology, this N-CHANNEL transistor offers unparalleled quality and reliability. With a minimum DS breakdown voltage of 30V and a maximum drain current of 0.1A, this transistor delivers exceptional performance in a compact, cylindrical package. Elevate your projects with the superior value and benefits of the BF245BRLRA, setting new standards in RF signal amplification.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow in the transistor, enhancing its overall performance.

Configuration: SINGLE

Simplified design with a single channel, making it easy to integrate into circuitry.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring high-quality signal enhancement.

Minimum DS Breakdown Voltage: 30 V

Can handle higher voltage levels, making it suitable for a wide range of applications.

Package Shape: ROUND

Compact and space-saving design, suitable for various compact electronic devices.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards, providing a secure connection.

Operating Mode: DEPLETION MODE

Offers low leakage current and high input impedance, improving overall performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for applications requiring high-frequency signal processing, such as advanced communication systems.

No. of Terminals: 3

Provides necessary connections for efficient operation without unnecessary complexity.

Package Style (Meter): CYLINDRICAL

Compact and easy to handle, suitable for various electronic applications.

Field Effect Transistor Technology: JUNCTION

Utilizes advanced technology for improved performance and efficiency.

Transistor Element Material: SILICON

Known for its reliability and efficiency in electronic components, ensuring stable performance.

Terminal Finish: TIN LEAD

Provides a reliable and secure connection, minimizing signal loss and interference.

Maximum Drain Current (ID): 0.1 A

Can handle higher current levels, suitable for applications requiring power amplification.

Terminal Position: BOTTOM

Facilitates easy installation and connection in various electronic circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245BRLRA attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245BRLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20