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BF513-TAPE-7

NXP Semiconductors

BF513-TAPE-7 by NXP Semiconductors

BF513-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequencies. Its compact SO package ensures efficient surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,640 parts In-Stock

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Digiode

USA . 611 parts In-Stock

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Anansix

USA . 454 parts In-Stock

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454

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One Stop Electronics

USA . 1,244 parts In-Stock

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$17.050

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UNI Independent Distributors

Spain . 1,569 parts In-Stock

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Corphita

USA . 1,089 parts In-Stock

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Northwest PG Solutions

USA . 514 parts In-Stock

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Native Components

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Overview

Elevate your designs with the BF513-TAPE-7 from NXP Semiconductors, where quality meets innovation. This N-channel RF small signal FET is crafted for excellence, ensuring optimal performance in amplification applications. With its compact surface-mount design and robust construction, it thrives in high-frequency environments while delivering reliability you can trust. Choose NXP for cutting-edge technology that enhances your projects and drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection against environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their lower on-resistance and higher efficiency, making them ideal for amplifier applications.

Configuration: SINGLE

A single configuration allows for straightforward integration into circuits, making it easier for designers to implement.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET ensures high performance in signal amplification tasks, suitable for RF applications.

Surface Mount: YES

Surface mount capability allows for compact designs and efficient use of PCB space, suitable for modern electronics.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V provides sufficient robustness against voltage spikes, enhancing circuit reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for easier placement and soldering on PCBs, facilitating efficient manufacturing.

Terminal Form: GULL WING

Gull wing terminals enhance solder joint strength and improve handling during assembly, ensuring better reliability.

Operating Mode: DEPLETION MODE

Depletion-mode operation allows for low power consumption, which is ideal for battery-operated and energy-efficient applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of operating at very high frequencies, making this FET suitable for RF applications and high-speed circuits.

No. of Terminals: 3

Three terminals provide the necessary connections for efficient signal management and simplify circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in compact designs, making it suitable for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Junction technology allows for efficient control of the current flow and improved performance in various electronic applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliable performance in demanding environments, making it versatile for various applications.

Transistor Element Material: SILICON

Silicon material is the standard for reliability and performance in transistors, providing a solid foundation for various electronic functions.

Maximum Drain Current (ID): 0.03 A

A maximum drain current of 0.03 A ensures adequate handling of signal amplification needs in moderate power applications.

Terminal Position: DUAL

Dual terminal positioning aids in circuit design flexibility, allowing for diverse layout options on PCBs.

Maximum Feedback Capacitance (Crss): 0.4 pF

Low feedback capacitance contributes to reduced signal distortion and improves overall circuit performance, especially in high-frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF513-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.4 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF513-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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