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TGF1350-SCC

Texas Instruments

TGF1350-SCC by Texas Instruments

TGF1350-SCC by Texas Instruments is an RF FET with 8V DS breakdown voltage, 2.5 dB power gain, and operates in depletion mode. Ideal for KU band applications, this GaAs transistor has a rectangular package shape and 6 terminals for high-frequency performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,460 parts In-Stock

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6,460

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Digiode

USA . 247 parts In-Stock

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247

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Distributors (Availability)

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Parana Technologies

USA . 810 parts In-Stock

1+ parts

$1.070

100+ parts

-

1k+ parts

$1.922

10k+ parts

-

810

$1.070

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$1.922

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DigiPath Technology Company

USA . 1,807 parts In-Stock

1+ parts

$1.178

100+ parts

$1.084

1k+ parts

-

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1,807

$1.178

$1.084

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ChromeModa Solutions

Germany . 6,907 parts In-Stock

1+ parts

$1.202

100+ parts

$0.986

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-

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6,907

$1.202

$0.986

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IDEA Electronic Components Group

UK . 638 parts In-Stock

1+ parts

$1.202

100+ parts

-

1k+ parts

$1.082

10k+ parts

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638

$1.202

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$1.082

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Semicontronic

India . 340 parts In-Stock

1+ parts

$6.050

100+ parts

$5.899

1k+ parts

$5.868

10k+ parts

-

340

$6.050

$5.899

$5.868

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One Stop Electronics

USA . 1,105 parts In-Stock

1+ parts

$14.050

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1,105

$14.050

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AZTECH Wire

Italy . 354 parts In-Stock

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$17.841

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354

$17.841

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Ampacity Inc.

Singapore . 459 parts In-Stock

1+ parts

$56.050

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459

$56.050

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Corphita

USA . 2,128 parts In-Stock

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2,128

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Corohmni

South Africa . 205 parts In-Stock

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205

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Overview

Enhance your RF signal performance with the TGF1350-SCC by Texas Instruments, a top-quality RF Small Signal Field Effect Transistor. Designed with precision by a trusted manufacturer, this surface-mount transistor offers exceptional power gain and breakdown voltage for optimal performance in the KU band. Ideal for a wide range of applications, this product provides customers with reliable, high-quality signal amplification that delivers value and benefits beyond compare. Upgrade your RF systems today with the TGF1350-SCC and experience the difference firsthand.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy and reliable integration onto circuit boards, saving space and facilitating automated manufacturing processes.

Minimum DS Breakdown Voltage: 8 V

The minimum breakdown voltage of 8 V ensures a level of robustness and protection against voltage spikes, enhancing the reliability of the product in various operating conditions.

Minimum Power Gain (Gp): 2.5 dB

With a minimum power gain of 2.5 dB, this product offers amplification of input signals, making it suitable for applications where signal strength needs to be increased.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of handling and placement within a circuit design, allowing for efficient utilization of space on a circuit board.

Terminal Form: NO LEAD

The absence of leads simplifies the assembly process and reduces the risk of damage during installation, improving overall product reliability.

Operating Mode: DEPLETION MODE

Operating in depletion mode allows for control of current flow, offering flexibility in signal amplification and modulation applications.

Highest Frequency Band: KU BAND

Designed for operation in the Ku band frequency range, this product is suitable for high-frequency applications such as satellite communication and radar systems.

No. of Terminals: 6

Having 6 terminals provides versatility in connecting to external circuitry and enables complex signal processing capabilities.

Package Style (Meter): UNCASED CHIP

The unencased chip package style offers a compact and lightweight design, ideal for applications where size and weight constraints are critical.

Field Effect Transistor Technology: JUNCTION

Utilizing junction field effect transistor technology ensures high performance and low noise characteristics, suitable for applications requiring precision signal amplification.

Transistor Element Material: GALLIUM ARSENIDE

The use of gallium arsenide as the transistor element material provides high electron mobility and low noise characteristics, making it ideal for high-frequency applications.

Terminal Position: UPPER

The upper terminal position facilitates easy connectivity in circuit designs and allows for efficient heat dissipation, enhancing overall product performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) TGF1350-SCC attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Minimum DS Breakdown Voltage:

8 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-XUUC-N6

No. of Terminals:

6

Operating Mode:

DEPLETION MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Minimum Power Gain (Gp):

2.5 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TGF1350-SCC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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