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BF245CRLRE

Onsemi

BF245CRLRE by Onsemi

BF245CRLRE by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3 (THROUGH-HOLE).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,234 parts In-Stock

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Vyrian

USA . 872 parts In-Stock

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Native Components

USA . 674 parts In-Stock

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SupplyDigital Components

Austria . 7,158 parts In-Stock

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Kulean Microsystems

USA . 5,527 parts In-Stock

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Problanco Electronics

Mexico . 2,901 parts In-Stock

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Northwest PG Solutions

USA . 2,129 parts In-Stock

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Corphita

USA . 1,129 parts In-Stock

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TANS Electronics

Latvia . 1,052 parts In-Stock

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UHIMA Technologies

Türkiye . 951 parts In-Stock

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Corohmni

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Overview

Enhance your RF signal amplification with the BF245CRLRE by Onsemi, a top-of-the-line N-CHANNEL FET boasting ultra-high frequency capabilities. Manufactured with precision and expertise by Onsemi, this single configuration transistor is designed for optimal performance in amplifier applications. Its durable plastic/epoxy package ensures reliability, while its depletion mode operation guarantees efficient functionality. Elevate your projects with the value and benefits that this high-quality transistor offers, providing customers with unparalleled performance and longevity in their electronic endeavors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and long-lasting performance.

Polarity or Channel Type: N-CHANNEL

Provides excellent conductivity and efficiency in amplification applications.

Configuration: SINGLE

Simplified setup and operation for ease of use.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in such applications.

Minimum DS Breakdown Voltage: 30 V

Can withstand high voltages, making it suitable for a wide range of electronic projects.

Package Shape: ROUND

Compact design that saves space and allows for easy integration into circuits.

Terminal Form: THROUGH-HOLE

Traditional and reliable terminal form for secure connections.

Operating Mode: DEPLETION MODE

Efficient operation mode that ensures minimal power consumption and heat generation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for high-frequency applications requiring fast signal processing.

No. of Terminals: 3

Simple terminal setup for easy installation and connection.

Package Style (Meter): CYLINDRICAL

Unique package style that offers a distinctive look and efficient heat dissipation.

Field Effect Transistor Technology: JUNCTION

Dependable technology known for its high performance and reliability.

Transistor Element Material: SILICON

High-quality material known for its conductivity and durability.

Terminal Finish: TIN LEAD

Provides excellent conductivity and corrosion resistance for long-lasting performance.

Maximum Drain Current (ID): 0.1 A

Capable of handling moderate current levels for reliable operation.

Terminal Position: BOTTOM

Convenient terminal position for easy connections in circuit layouts.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245CRLRE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245CRLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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