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2N5486RLRA

Onsemi

2N5486RLRA by Onsemi

Onsemi's 2N5486RLRA is an N-CHANNEL RF FET with 10 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a max ID of 0.03 A and operates up to 150 °C, housed in a CYLINDRICAL package with PLASTIC/EPOXY body.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 656 parts In-Stock

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Digiode

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Native Components

USA . 265 parts In-Stock

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$16.698

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Northwest PG Solutions

USA . 2,280 parts In-Stock

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$18.367

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$16.531

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Problanco Electronics

Mexico . 7,909 parts In-Stock

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Kulean Microsystems

USA . 7,833 parts In-Stock

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SupplyDigital Components

Austria . 5,928 parts In-Stock

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TANS Electronics

Latvia . 1,727 parts In-Stock

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Corphita

USA . 1,662 parts In-Stock

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UHIMA Technologies

Türkiye . 358 parts In-Stock

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Corohmni

South Africa . 211 parts In-Stock

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Overview

Unleash the power of high-quality RF Small Signal Field Effect Transistors with the 2N5486RLRA by Onsemi. This single N-CHANNEL transistor is perfect for amplifier applications in the ultra-high frequency band, offering a minimum power gain of 10 dB. With its advanced junction technology and maximum operating temperature of 150 °C, this transistor delivers superior performance and reliability. Trust Onsemi's reputation for excellence and innovation to take your projects to the next level. Experience the benefits and value that the 2N5486RLRA brings to your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically provide better conductivity and efficiency compared to P-Channel transistors.

Minimum Power Gain (Gp): 10 dB

Offers a higher power gain, which is beneficial for amplifier applications.

Operating Mode: DEPLETION MODE

Depletion mode transistors can be used in a wide range of applications due to their flexibility.

Maximum Operating Temperature: 150 °C

Can operate at a relatively high temperature, making it suitable for various environments.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5486RLRA attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5486RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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