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2N5484

Onsemi

2N5484 by Onsemi

Onsemi's 2N5484 is an N-CHANNEL RF FET with 16 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. With 0.35 W Pd max and DEPLETION MODE operation, it offers high performance in a CYLINDRICAL package.

Median Price

$3.210

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 4,205 parts In-Stock

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$3.210

100+ parts

$1.590

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$1.160

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$1.150

4,205

$3.210

$1.590

$1.160

$1.150

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 11 parts In-Stock

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$0.770

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$0.580

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$0.500

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11

$0.770

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Digiode

USA . 5,026 parts In-Stock

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$1.986

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$1.986

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Kruse Electronics AG

Switzerland . 10,000 parts In-Stock

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Germany . 10,000 parts In-Stock

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Vyrian

USA . 8,320 parts In-Stock

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ES Components

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Anansix

USA . 2,460 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 356 parts In-Stock

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Zilex Electronics Inc.

Canada . 320 parts In-Stock

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Huijzer Components

Netherlands . 100 parts In-Stock

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Electronics Depot

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R&J Components

USA . 71 parts In-Stock

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Electronic Expediters

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Prism Electronics

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PAR Electronics

UK . 15 parts In-Stock

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Tech-Mark Corp

USA . 13 parts In-Stock

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MISTER SPROCKETS

USA . 8 parts In-Stock

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ECAB

Sweden . 6 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 4 parts In-Stock

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Century Electronics Ltd.

USA . 2 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 586 parts In-Stock

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$0.795

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586

$0.795

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Corphita

USA . 1,745 parts In-Stock

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$1.881

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Component Stockers USA

USA . 5,461 parts In-Stock

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$2.030

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$1.340

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$1.000

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5,461

$2.030

$1.340

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Advanced Electronics

New Zealand . 63 parts In-Stock

1+ parts

$2.289

100+ parts

$2.083

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$1.877

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63

$2.289

$2.083

$1.877

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QUARKTWIN TECHNOLOGY LTD

USA . 27,770 parts In-Stock

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Kulean Microsystems

USA . 8,298 parts In-Stock

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Problanco Electronics

Mexico . 7,792 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,097 parts In-Stock

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TANS Electronics

Latvia . 6,302 parts In-Stock

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UNI Independent Distributors

Spain . 2,769 parts In-Stock

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Northwest PG Solutions

USA . 2,527 parts In-Stock

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Glotronic Ltd.

UK . 2,300 parts In-Stock

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Supply Digital

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Native Components

USA . 1,677 parts In-Stock

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Assy Fe

Spain . 1,355 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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SupplyDigital Components

Austria . 543 parts In-Stock

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UHIMA Technologies

Türkiye . 278 parts In-Stock

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RTC Component Inc.

USA . 71 parts In-Stock

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Perfect Parts

USA . 28 parts In-Stock

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Overview

Enhance your RF amplifier designs with the 2N5484 by Onsemi. Manufactured by a trusted industry leader, this N-CHANNEL Field Effect Transistor offers exceptional quality and performance. Perfect for applications in the ultra-high-frequency band, this transistor provides a minimum power gain of 16 dB, ensuring optimal signal amplification. With a maximum power dissipation of 0.35 W and a compact cylindrical package shape, the 2N5484 delivers value and reliability to customers seeking high-quality components for their electronic projects. Choose Onsemi for superior RF small signal FETs that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the transistor lightweight and durable, ideal for portable applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high input impedance and low output capacitance, making them suitable for high-frequency applications.

Configuration: SINGLE

Single configuration transistors are simpler to use and more cost-effective than multiple configurations, making them a good choice for basic amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in signal amplification.

Minimum Power Gain (Gp): 16 dB

With a minimum power gain of 16 dB, this transistor offers a high level of amplification, making it suitable for boosting weak signals.

Package Shape: ROUND

Round package shape provides ease of handling and installation in various circuit configurations.

Terminal Form: THROUGH-HOLE

Through-hole terminals make soldering and connection to a circuit board easier and more reliable.

Operating Mode: DEPLETION MODE

Depletion mode operation provides better control over the transistor characteristics and allows for efficient signal amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, ensuring reliable performance in high-speed signal processing.

No. of Terminals: 3

Three terminals provide sufficient connection points for input, output, and biasing, allowing for easy integration into a circuit.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact and space-saving design, suitable for applications where size is a constraint.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high input impedance and low noise characteristics, ideal for low-power amplifier applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, ensuring reliability in various operating conditions.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and low leakage current, ensuring stable performance and long-term reliability.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03A, this transistor can handle moderate current levels, making it suitable for low-power amplifier applications.

Terminal Position: BOTTOM

Bottom terminal position provides easy access for soldering and connection in various circuit layouts.

Maximum Feedback Capacitance (Crss): 1 pF

Low feedback capacitance of 1pF ensures stable high-frequency performance and reduces the risk of parasitic oscillations.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5484 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5484 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-137-3862, 5961011373862, 5961-15-167-4470, 5961151674470, 5961-01-026-6118, 5961010266118

NIIN

011373862, 151674470, 010266118

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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