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BF245AZL1

Onsemi

BF245AZL1 by Onsemi

BF245AZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

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1k+

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ComSIT Distribution GmbH

Germany . 1,500 parts In-Stock

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ComSIT USA

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Digiode

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Kulean Microsystems

USA . 8,229 parts In-Stock

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Problanco Electronics

Mexico . 2,177 parts In-Stock

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TANS Electronics

Latvia . 1,662 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,311 parts In-Stock

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 626 parts In-Stock

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Native Components

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Corohmni

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Overview

Discover the power of the BF245AZL1 by Onsemi, a top-of-the-line RF Small Signal Field Effect Transistor that guarantees superior performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, this N-CHANNEL transistor is perfect for applications such as amplifiers in the ultra-high frequency band. Its sleek cylindrical package design and high-quality silicon material ensure optimal functionality. Experience the value and benefits this transistor brings to your projects, with its high-frequency capabilities and efficient operation. Choose the BF245AZL1 for unmatched quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring its longevity and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility and lower on-resistance compared to P-channel FETs, making them ideal for high-performance amplifier applications.

Configuration: SINGLE

A single FET configuration simplifies circuit design and reduces complexity, making it easier to integrate into amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals with minimal distortion.

Minimum DS Breakdown Voltage: 30 V

This high breakdown voltage allows the transistor to handle higher voltages without damaging the component, increasing its reliability and longevity.

Package Shape: ROUND

The round package shape is compact and easy to mount, making it suitable for space-constrained applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and mount the transistor onto a circuit board, ensuring a secure connection.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer inherent bias stability, making them suitable for high-frequency amplifier applications where precise control over biasing is required.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, ensuring excellent signal fidelity and performance in high-frequency circuits.

No. of Terminals: 3

Having three terminals allows for easy integration into amplifier circuits, providing flexibility for connecting input and output signals.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is durable and easy to handle, providing good physical protection for the transistor.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers low noise and high gain characteristics, making it ideal for amplifier applications where signal integrity is critical.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, temperature stability, and performance, making them a popular choice for a wide range of electronic applications.

Terminal Finish: TIN LEAD

Tin lead terminals provide good solderability and conductivity, ensuring a reliable electrical connection for the transistor.

Maximum Drain Current (ID): 0.1 A

The high maximum drain current capability allows the transistor to handle higher power levels, making it suitable for demanding amplifier applications.

Terminal Position: BOTTOM

Having the terminals at the bottom makes it easy to mount the transistor onto a circuit board and ensure a secure connection for reliable performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245AZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245AZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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