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ATF-54143-BLKG

Broadcom

ATF-54143-BLKG by Broadcom

Broadcom ATF-54143-BLKG is a N-channel FET with 5V DS breakdown voltage, 15dB power gain, and operates in C band. Ideal for amplifier applications, it has a max drain current of 0.12A and can handle up to 0.725W power dissipation at 150°C.

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Overview

The ATF-54143-BLKG by Broadcom is a top-of-the-line RF Small Signal Field Effect Transistor designed for high performance in amplifier applications. With its N-CHANNEL configuration and ENHANCEMENT MODE operating mode, this transistor offers a minimum power gain of 15 dB and a breakdown voltage of 5 V. Manufactured with precision using HIGH ELECTRON MOBILITY technology, this transistor ensures superior quality and reliability. Perfect for C BAND frequencies, this transistor delivers unmatched efficiency and power, making it the ideal choice for any amplification needs. Elevate your projects with the ATF-54143-BLKG and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer better performance and efficiency compared to P-channel transistors.

Configuration: SINGLE

Single configuration transistors are easier to work with and integrate into circuits.

Transistor Application: AMPLIFIER

Ideal for use in amplification applications, providing clear and strong signal amplification.

Surface Mount: YES

Surface mount design allows for easy installation and space-saving on circuit boards.

Minimum DS Breakdown Voltage: 5 V

Provides reliable performance in a wide range of voltage applications.

Minimum Power Gain (Gp): 15 dB

High power gain ensures efficient signal amplification.

Package Shape: RECTANGULAR

Rectangular shape allows for easy stacking and compact placement on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide better stability and reliability in circuit connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor's conductivity.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-54143-BLKG attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

5 V

Maximum Drain Current (Abs) (ID):

.12 A

Maximum Drain Current (ID):

.12 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.725 W

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

ATF-54143-BLKG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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