Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 125 Cel; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
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RF Small Signal Field Effect Transistors (FET) 2SK192A-BLTPE4 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Toshiba
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2SK192A-BLTPE4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SMBJ18CA
General Instrument
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
C0603X104K5RACAUTO
KEMET Corporation
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
2N2222A
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Rectron
MMSZ5245BT1G
Onsemi
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
MURS160T3G
MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.
LL4148
General Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM2931AZ-5.0G
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
1N4148WSF-7
Diodes Incorporated
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
MBRA160T3G
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
Sangdest Microelectronics (Nanjing)
MMBF5484
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
TGF2023-2-01
Qorvo
Qorvo's TGF2023-2-01 is an N-channel RF FET for amplifier applications in KU band. Featuring GaN technology, it operates in depletion mode with a max ID of 1.25A. This single-configured transistor is surface-mountable and has a rectangular package shape without leads.
933114330112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; JESD-30 Code: O-PBCY-T3; Field Effect Transistor Technology: JUNCTION;
3N128
Texas Instruments
3N128 by Texas Instruments is a N-CHANNEL FET with 20V DS Breakdown Voltage, 13.5 dB Power Gain, and 0.05A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its DEPLETION MODE operation and METAL-OXIDE SEMICONDUCTOR technology.
934022600215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Operating Mode: DUAL GATE, DEPLETION MODE; Minimum DS Breakdown Voltage: 12 V;
3SK167-5
3SK167-5 by Onsemi is an N-channel RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring high frequency signal amplification in environments up to 125 °C, such as RF communication systems and radar equipment.
BF994SA-GS08
Vishay Telefunken
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .035 pF; Minimum DS Breakdown Voltage: 20 V; Terminal Form: GULL WING;
BLM8G0710S-30PBG
RF Small Signal Field-Effect Transistors;
3N201
3N201 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage and 15dB Power Gain. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND, it features DUAL GATE, DEPLETION MODE operation and 0.36W Max Power Dissipation.
BF909-TAPE-7
BF909-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
BF244BRLRP
BF244BRLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF904WR-TAPE-7
BF904WR-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
SHF-0189Z
Sirenza Microdevices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
BLF8G27LS-150GV
RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
BF908WRT/R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
934057513115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: R-PDSO-G4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
J308RL1
J308RL1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF998
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
BF908,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF556A,215
BF556A,215 by NXP Semiconductors is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 30V DS Breakdown Voltage and can handle up to 0.25W power dissipation. This SMALL OUTLINE transistor has a max operating temperature of 150°C and is designed for VERY HIGH FREQUENCY BAND usage.
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2SK197
Hitachi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: DEPLETION MODE; Maximum Drain Current (ID): .02 A;
Renesas Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;
2SK161
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
2SK192A-GR
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; JESD-30 Code: R-PSIP-T3; Package Body Material: PLASTIC/EPOXY;
2SK1241
N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Drain Current (Abs) (ID): .06 A;
2SK1243
2SK1242
N-CHANNEL; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A;
2SK1240
N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .06 A;
2SK1771TE85L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Qualification: Not Qualified; Maximum Drain Current (ID): .03 A;
2SK1771
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; JESD-30 Code: R-PDSO-G4; Package Shape: RECTANGULAR;
2SK161-Y
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: JUNCTION;
2SK1771TE85R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DEPLETION MODE; No. of Elements: 1; Maximum Drain Current (ID): .03 A;
2SK192A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
2SK161-YTPE4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;
2SK192A-BL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): IN-LINE; Package Shape: RECTANGULAR;
2SK161-OTPE4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Transistor Application: AMPLIFIER; Package Style (Meter): IN-LINE;
2SK161TPE4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 125 Cel; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
2SK161-O
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 125 Cel;
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