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Toshiba RF Small Signal Field Effect Transistors (FET) 1

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
3SK292(TE85R,F) by Toshiba

3SK292(TE85R,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12.5 V; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

12.5 V

.03 A

METAL-OXIDE SEMICONDUCTOR

.04 pF

VERY HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

23.5 dB

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON