Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): IN-LINE; Package Shape: RECTANGULAR;
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RF Small Signal Field Effect Transistors (FET) 2SK192A-BL attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Toshiba
Configuration:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
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JESD-609 Code:
No. of Elements:
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Maximum Operating Temperature:
Package Body Material:
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Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
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Surface Mount:
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Transistor Application:
Transistor Element Material:
2SK192A-BL Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
BAV99
Kec
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WT
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Formosa Microsemi
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
DS18B20Z+
Analog Devices
DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
Rochester Electronics
MMBF170LT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
SMBJ18CA
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
MBRS360T3G
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
M24308/2-1F
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
SS14
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BF980
NXP Semiconductors
BF980 by NXP Semiconductors is an N-channel RF FET designed for ultra-high frequency applications. It features a min DS breakdown voltage of 18V and operates in dual gate, depletion mode. Its ceramic, metal-sealed package ensures reliability in compact designs.
BLS7G2731L-220P
N-CHANNEL; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF992
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .04 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF998
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
ATF-36163-BLKG
Broadcom
Broadcom's ATF-36163-BLKG is an N-channel RF FET with a 3V DS breakdown voltage, 9.4 dB power gain, and operates in depletion mode. Ideal for amplifier applications in the Ku band, it features a small outline package with Gull Wing terminals and high electron mobility technology. With a max operating temperature of 150°C and 0.18W power dissipation, this transistor offers reliable performance in various RF signal processing systems.
2SK197
Hitachi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: DEPLETION MODE; Maximum Drain Current (ID): .02 A;
ATF-54143-TR2G
Broadcom's ATF-54143-TR2G is an N-channel RF FET with 15 dB power gain, ideal for amplifier applications in C band. It features a 5V DS breakdown voltage, 0.12A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and can handle up to 0.725W power dissipation at 150°C.
FLU17XM
Eudyna Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; No. of Elements: 1; Additional Features: HIGH RELIABILITY;
MMBFJ310
The Onsemi MMBFJ310 is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. This SMALL OUTLINE transistor has a Max Operating Temperature of 150°C and a feedback capacitance of 2.5 pF, making it suitable for high-frequency amplification needs.
ATF-58143-BLKG
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Maximum Power Dissipation Ambient: .5 W; Minimum DS Breakdown Voltage: 5 V;
BFR84
BFR84 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications, featuring a max DS breakdown voltage of 20V and operating in the very high frequency band. It has a dual gate, depletion mode configuration with a max temp of 175 °C. This cylindrical metal package transistor supports up to 0.05A drain current.
BF909WR
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 7 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF8G20LS-160V
RF Small Signal Field-Effect Transistors;
2N3823
Swampscott Electronics
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; Field Effect Transistor Technology: JUNCTION;
BF1204,115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Minimum DS Breakdown Voltage: 10 V; Minimum Power Gain (Gp): 21 dB;
MMBF5484
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
934056333115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .03 pF; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MPF102RLRM
MPF102RLRM by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at up to 125 °C. Featuring a VERY HIGH FREQUENCY BAND, this transistor has 3 terminals and a max Crss of 3pF.
2N4416A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Power Gain (Gp): 10 dB; Terminal Finish: TIN LEAD;
3SK168E
N-CHANNEL; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
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Renesas Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;
2SK161
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
2SK192A-GR
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; JESD-30 Code: R-PSIP-T3; Package Body Material: PLASTIC/EPOXY;
2SK1241
N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Drain Current (Abs) (ID): .06 A;
2SK1243
2SK1242
N-CHANNEL; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A;
2SK1240
N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .06 A;
2SK1771TE85L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Qualification: Not Qualified; Maximum Drain Current (ID): .03 A;
2SK1771
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; JESD-30 Code: R-PDSO-G4; Package Shape: RECTANGULAR;
2SK161-Y
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: JUNCTION;
2SK1771TE85R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DEPLETION MODE; No. of Elements: 1; Maximum Drain Current (ID): .03 A;
2SK192A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
2SK161-YTPE4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;
2SK161-OTPE4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Transistor Application: AMPLIFIER; Package Style (Meter): IN-LINE;
2SK192A-BLTPE4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 125 Cel; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
2SK161TPE4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 125 Cel; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
2SK161-O
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 125 Cel;
2SK193F
Nec Electronics America
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Minimum Power Gain (Gp): 13 dB;
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