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BFR84

NXP Semiconductors

BFR84 by NXP Semiconductors

BFR84 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications, featuring a max DS breakdown voltage of 20V and operating in the very high frequency band. It has a dual gate, depletion mode configuration with a max temp of 175 °C. This cylindrical metal package transistor supports up to 0.05A drain current.

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Digiode

USA . 1,827 parts In-Stock

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Anansix

USA . 1,615 parts In-Stock

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NAC Semi

USA . 739 parts In-Stock

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ComSIT Distribution GmbH

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Vyrian

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Fibra_Brandt Electronic GMBH

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ACDS - Activité Composants Distribution Service

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LWI Electronics Inc

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ECAB

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Electronic Expediters

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LittleDiode

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GES GmbH

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Donberg Electronics Ltd

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Native Components

USA . 538 parts In-Stock

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Northwest PG Solutions

USA . 2,245 parts In-Stock

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One Stop Electronics

USA . 986 parts In-Stock

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Corphita

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UNI Independent Distributors

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Montclair Electronics, Inc.

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Overview

Unlock unparalleled performance with the BFR84 by NXP Semiconductors, a leader in innovative RF solutions. This robust N-channel FET delivers exceptional amplification for your very high-frequency applications, ensuring top-notch reliability. Crafted from superior materials and designed for maximum efficiency, it seamlessly integrates into diverse systems—from communications to consumer electronics—offering unmatched value and durability. Elevate your projects with NXP’s commitment to quality and excellence!

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body enhances durability and heat dissipation, making it suitable for high-performance applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically provide higher electron mobility, resulting in better performance for amplification and switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection against reverse polarity, improving reliability in circuit designs.

Transistor Application: AMPLIFIER

Designed for amplification purposes, making it ideal for RF signal applications where signal strength is crucial.

Minimum DS Breakdown Voltage: 20 V

A breakdown voltage of 20 V ensures reliable operation in various circuits without risk of damage under normal conditions.

Package Shape: ROUND

The round package shape is conducive for specific mounting and thermal management needs in compact electronic designs.

Terminal Form: WIRE

Wire terminals provide flexible connection options, suitable for various applications and ease of integration into different circuit designs.

Operating Mode: DUAL GATE, DEPLETION MODE

Dual gate operation allows for better control over gain and frequency, making it ideal for sophisticated RF applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

This characteristic allows the FET to operate effectively in applications requiring high frequency, improving signal quality and performance.

No. of Terminals: 4

With four terminals, this FET provides multiple connection options, allowing for flexible circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances thermal performance and is beneficial in RF applications where space is at a premium.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and low power consumption, making it ideal for battery-operated devices and minimizing load on circuits.

Maximum Operating Temperature: 175 °C

A high operating temperature tolerance allows this FET to be used in extreme environments without compromising reliability.

Transistor Element Material: SILICON

Silicon technology is well-established, providing a balance of performance, cost, and availability, making it a go-to choice for various applications.

Maximum Drain Current (ID): 0.05 A

The maximum drain current specification makes this transistor suitable for low to moderate power applications while ensuring efficient operation.

Terminal Position: BOTTOM

Bottom-terminal positioning allows for compact board layouts and better heat sinking capabilities in design.

Case Connection: SOURCE

Direct source connection enhances the ease of integration into circuit layouts, resulting in more efficient design and functionality.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BFR84 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BFR84 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-302-0756, 5961123020756, 5961-14-421-4961, 5961144214961

NIIN

123020756, 144214961

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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