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2SK161

Toshiba

2SK161 by Toshiba

Toshiba's 2SK161 is an N-CHANNEL RF FET with a DEPLETION MODE. Operating in the VERY HIGH FREQUENCY BAND, it has a power dissipation of 0.2 W and max temperature of 125 °C. Ideal for AMPLIFIER applications due to its SILICON element material and low feedback capacitance of 0.15 pF.

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Overview

Elevate your electronic projects to the next level with the Toshiba 2SK161 RF Small Signal Field Effect Transistor. Known for its superior quality and reliability, Toshiba is a trusted manufacturer in the industry. This N-channel transistor is ideal for amplifier applications in the very high-frequency band. With a maximum power dissipation of 0.2W and operating temperature of 125°C, this transistor offers unmatched performance and durability. Upgrade your designs with the 2SK161 and experience the difference Toshiba technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material offers good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, providing faster switching speeds and lower ON resistance, making this transistor efficient for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and integration process, making it easier to use in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor offers excellent amplification capabilities.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and placement on circuit boards, contributing to a more organized and compact design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, ensuring stable performance in amplifier applications.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for precise control over the transistor characteristics, making it more versatile in amplifier circuit designs.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency operation, this transistor is ideal for applications requiring high speed and signal accuracy.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Package Style (Meter): IN-LINE

The in-line package style offers compatibility with standard assembly processes, making it a convenient choice for amplifier circuit integration.

Field Effect Transistor Technology: JUNCTION

Junction field effect transistor technology provides efficient operation and low noise performance, making this transistor suitable for amplifier applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperature conditions, ensuring reliable performance in various environments.

Transistor Element Material: SILICON

Silicon material offers high conductivity and low leakage, providing stable and consistent performance in amplifier applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and secure connections, enhancing the reliability of the transistor in amplifier circuits.

Terminal Position: SINGLE

Single terminal position simplifies the connection process, ensuring easy integration into amplifier circuit designs.

Maximum Feedback Capacitance (Crss): 0.15 pF

With a low maximum feedback capacitance of 0.15 pF, this transistor provides better high-frequency stability and reduced signal distortion in amplifier applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK161 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.15 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK161 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5330-00-520-1553, 5330005201553

NIIN

005201553

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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