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2SK168-E

Hitachi

2SK168-E by Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; JEDEC-95 Code: TO-92; Qualification: Not Qualified;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

< 1k

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Fibra_Brandt Electronic GMBH

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GES GmbH

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 2,500 parts In-Stock

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Native Components

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Northwest PG Solutions

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK168-E attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Hitachi

Specs

Configuration:

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK168-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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