Loading...

2N5549

Texas Instruments

2N5549 by Texas Instruments

2N5549 by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. Operating in DEPLETION MODE, it offers a VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.36W and feedback capacitance of 2pF, it is ideal for RF applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,513 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,513

-

-

-

-

Vyrian

USA . 3,764 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,764

-

-

-

-

Anansix

USA . 1,868 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,868

-

-

-

-

PUI

USA . 722 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

722

-

-

-

-

Prism Electronics

USA . 83 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

83

-

-

-

-

Holdelec - ElecDif-Pro

France . 70 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

70

-

-

-

-

LittleDiode

UK . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,161 parts In-Stock

1+ parts

$1.756

100+ parts

-

1k+ parts

$2.329

10k+ parts

-

2,161

$1.756

-

$2.329

-

DigiPath Technology Company

USA . 1,758 parts In-Stock

1+ parts

$1.934

100+ parts

$1.779

1k+ parts

-

10k+ parts

-

1,758

$1.934

$1.779

-

-

ChromeModa Solutions

Germany . 5,385 parts In-Stock

1+ parts

$1.973

100+ parts

$1.618

1k+ parts

-

10k+ parts

-

5,385

$1.973

$1.618

-

-

IDEA Electronic Components Group

UK . 2,110 parts In-Stock

1+ parts

$1.973

100+ parts

-

1k+ parts

$1.776

10k+ parts

-

2,110

$1.973

-

$1.776

-

AZTECH Wire

Italy . 458 parts In-Stock

1+ parts

$12.598

100+ parts

-

1k+ parts

-

10k+ parts

-

458

$12.598

-

-

-

One Stop Electronics

USA . 1,001 parts In-Stock

1+ parts

$47.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,001

$47.050

-

-

-

Corphita

USA . 3,961 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,961

-

-

-

-

Northwest PG Solutions

USA . 610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

610

-

-

-

-

Native Components

USA . 431 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

431

-

-

-

-

Robosynatics

Brazil . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Lucentia Tech

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$1.276

1k+ parts

$1.182

10k+ parts

$1.182

100

-

$1.276

$1.182

$1.182

Perfect Parts

USA . 93 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

93

-

-

-

-

Overview

Elevate your RF signal performance with the 2N5549 by Texas Instruments. Designed with precision and reliability in mind, this N-CHANNEL FET offers unparalleled switching capabilities in the very high frequency band. Whether you're working on telecommunications, radar systems, or medical equipment, this transistor's DEPLETION MODE operation and SILICON element material ensure optimal functionality. Trust in Texas Instruments' legacy of quality and innovation to enhance your projects with the 2N5549.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good heat dissipation and durability, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs generally have lower on-resistance and higher electron mobility, making them efficient for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into existing electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient switching operations.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: WIRE

Wire terminals provide flexibility in connecting the transistor to other components in the circuit.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for easy control of the transistor's conductivity, offering versatility in circuit design.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operates in very high frequency bands, suitable for applications requiring high-speed signal processing.

Maximum Power Dissipation (Abs): 0.36 W

With a maximum power dissipation of 0.36W, the transistor can handle high power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-saving, ideal for small electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers low noise performance and high input impedance, making it suitable for amplification applications.

Maximum Operating Temperature: 200 °C

Can operate at high temperatures up to 200°C, suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon material provides good electron mobility and reliability, ensuring stable performance over time.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering, enhancing the ease of integration.

Case Connection: GATE

Gate connection allows for precise control of the transistor's conductivity, ensuring accurate switching operations.

Maximum Feedback Capacitance (Crss): 2 pF

Low feedback capacitance helps minimize signal distortion and improve high-frequency performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5549 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

GATE

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N5549 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7