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2SK197-E

Renesas Technology

2SK197-E by Renesas Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 2,344 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,344

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Native Components

USA . 576 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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576

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK197-E attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Technology

Specs

Configuration:

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK197-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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