Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
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$0.870
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$0.750
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Cogito LLC
Vyrian
Anansix
Digiode
LIBRA Elektronik GmbH
One Stop Electronics
$0.050
Native Components
$0.676
Northwest PG Solutions
$0.744
AZTECH Wire
$11.550
Perfect Parts
UNI Independent Distributors
Microchip USA
Corphita
RF Small Signal Field Effect Transistors (FET) BF992,215 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
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Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
BF992,215 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.75
SB
8541.21.00.80
PCN Obsolescence/ EOL - Mult Devices EOL 30/May/2019
PCN Design/Specification - Resin Hardener 02/Jul/2013
PCN Packaging - All Dev Label Update 15/Dec/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BSS138
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
1N4148WS
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
EU2B-YS303C
Idec
ROTARY SWITCH;
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
LM317AEMP/NOPB
Texas Instruments
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
LM555CMX
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
CRCW04020000Z0EDHP
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
STM32F407VGT6
STMicroelectronics
STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
SMBJ18CA
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
American Power Devices
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
Nte Electronics
STM32H753BIT6
STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
MBRS360T3G
Onsemi
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
STM32F103C8T6
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
ATF-54143-TR2G
Broadcom
Broadcom's ATF-54143-TR2G is an N-channel RF FET with 15 dB power gain, ideal for amplifier applications in C band. It features a 5V DS breakdown voltage, 0.12A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and can handle up to 0.725W power dissipation at 150°C.
BF556A-TAPE-7
NXP Semiconductors
BF556A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BLS7G2730L-200P
RF Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BF245CRLRA
BF245CRLRA by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration, DEPLETION MODE operation, and 0.1A ID. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.
934059875115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Minimum DS Breakdown Voltage: 6 V; No. of Elements: 2; JESD-30 Code: R-PDSO-F6;
J308RLRE
J308RLRE by Onsemi is an N-CHANNEL RF FET with 25V DS breakdown voltage. Ideal for amplifiers in ultra-high frequency band, it features a single configuration and operates in depletion mode. With a package style of cylindrical shape, it has 3 terminals and low feedback capacitance of 2.5pF.
BF909TRL13
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
BF511-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
MMBFJ309
The Onsemi MMBFJ309 is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a PLASTIC/EPOXY package, GULL WING terminals, and operates in DEPLETION MODE at up to 150 °C.
2N5953
2N5953 by Texas Instruments is an N-CHANNEL RF FET with a max power dissipation of 0.36W. It is commonly used for switching applications due to its single configuration and junction technology. With a max operating temperature of 150°C, it features a cylindrical package shape with wire terminals.
BF908TRL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON;
934055958115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G4;
NE5550279A-A
Renesas Electronics
NE5550279A-A by Renesas Electronics is a N-CHANNEL FET with 30V DS breakdown voltage, suitable for ULTRA HIGH-FREQUENCY applications. It operates in ENHANCEMENT MODE with 0.6A drain current and 6.25W power dissipation at max 150°C temperature, featuring a RECTANGULAR MICROWAVE package style.
2N5951
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: JUNCTION;
2N3823UB
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; JESD-30 Code: R-CDSO-N3;
CLF1G0060S-30U
N-CHANNEL; Maximum Operating Temperature: 250 Cel;
3SK168
3SK168 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.25W. Ideal for applications requiring small signal amplification in high-frequency circuits, such as RF receivers and transmitters. Operating temp up to 125 °C ensures reliable performance in various environments.
BF1212WR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Maximum Feedback Capacitance (Crss): .03 pF;
3SK167-4
3SK167-4 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring high frequency signal amplification in environments up to 125 °C, such as RF communication systems and radar equipment.
2N5486ZL1
2N5486ZL1 by Onsemi is an N-CHANNEL RF FET with a power gain of 10 dB, ideal for amplifier applications in the UHF band. Operating in depletion mode, it has a max drain current of 0.03 A and feedback capacitance of 1 pF, housed in a cylindrical package with through-hole terminals.
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BF998E6327HTSA1
Infineon Technologies
BF998E6327HTSA1 by Infineon Technologies is an N-CHANNEL RF FET with 12V DS Breakdown Voltage. Operating in DEPLETION MODE, it has ULTRA HIGH FREQUENCY BAND capabilities. This SMALL OUTLINE transistor is ideal for DUAL GATE applications in SOURCE connections.
BF998,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 4;
BF998R,215
NXP Semiconductors' BF998R,215 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 12V DS Breakdown Voltage and 0.03A Drain Current. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for small outline designs in SOURCE connections.
BF998WR,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .03 A;
BF998A-GS08
Vishay Telefunken
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Case Connection: SOURCE;
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G4;
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
BF998
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .025 pF;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Transistor Application: AMPLIFIER; Qualification: Not Qualified;
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .03 A; Terminal Form: GULL WING;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
BF998,235
BF998,235 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in DEPLETION MODE and has a max ID of 0.03A. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this transistor features a GULL WING terminal form and can handle up to 0.2W power dissipation.
BF998B-GS08
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1; JESD-30 Code: R-PDSO-G4;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Terminal Form: GULL WING;
BF998RE6327HTSA1
RF Small Signal Field-Effect Transistors;
BF994SA-GS08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .035 pF; Minimum DS Breakdown Voltage: 20 V; Terminal Form: GULL WING;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;
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