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2N5397

Texas Instruments

2N5397 by Texas Instruments

2N5397 by Texas Instruments is an N-CHANNEL FET with 25V DS Breakdown Voltage, 15dB Power Gain, and operates in DEPLETION MODE. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its SILICON element material and 1.2pF Max Feedback Capacitance.

Median Price

$18.850

Lifecycle Status

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28

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1k+

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Mouser Electronics

USA . 36 parts In-Stock

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$18.850

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$13.410

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Freelance Electronics

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$0.574

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TEDSS.com

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Forefront Electronics and Design

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Bristol Electronics

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Digiode

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American Microsemiconductor Inc.

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Vyrian

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Kruse Electronics AG

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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NexGen Digital

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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North Shore Components

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Tech-Mark Corp

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Semi Source

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Manoshevitz Elec. Sales

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Corel Iberica Componentes, S.L.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Huijzer Components

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LWI Electronics Inc

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LittleDiode

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Parana Technologies

USA . 671 parts In-Stock

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$0.598

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ChromeModa Solutions

Germany . 3,101 parts In-Stock

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IDEA Electronic Components Group

UK . 2,016 parts In-Stock

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Corphita

USA . 1,516 parts In-Stock

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Native Components

USA . 596 parts In-Stock

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Northwest PG Solutions

USA . 1,699 parts In-Stock

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Glotronic Ltd.

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Supply Digital

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DigiPath Technology Company

USA . 1,090 parts In-Stock

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RTC Component Inc.

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Montclair Electronics, Inc.

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Overview

Unlock unparalleled performance with the 2N5397 RF Small Signal Field Effect Transistor by Texas Instruments. Engineered with precision and quality, this N-CHANNEL transistor offers exceptional power gain for amplifier applications in the very high-frequency band. Its durable metal package body ensures reliability while its depletion mode operation optimizes performance. Ideal for demanding environments, the 2N5397 delivers superior value and benefits, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages offer better thermal conductivity, which helps in heat dissipation and improves overall performance and reliability of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and faster switching speeds compared to P-channel FETs, making them suitable for applications requiring high frequency operation.

Minimum DS Breakdown Voltage: 25 V

A high breakdown voltage ensures reliable operation and protection against voltage spikes, making this transistor suitable for applications where voltage fluctuations may occur.

Maximum Power Dissipation (Abs): 0.3 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels without overheating, making it suitable for amplifier applications.

Operating Mode: DEPLETION MODE

Depletion mode FETs are normally ON devices, which can simplify circuit design and provide constant biasing, making them suitable for amplifier applications.

Maximum Feedback Capacitance (Crss): 1.2 pF

Low feedback capacitance ensures minimal signal loss and better high frequency performance, making this transistor suitable for very high frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5397 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1.2 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5397 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-563-1170, 5961005631170, 5961-00-477-0630, 5961004770630, 5961-01-212-8010, 5961012128010, 5961-00-241-3487, 5961002413487, 5961-00-455-0285, 5961004550285, 5961-01-213-8512, 5961012138512, 5961-01-037-1540, 5961010371540, 5961-99-118-8714, 5961991188714, 5961-99-118-6888, 5961991186888

NIIN

005631170, 004770630, 012128010, 002413487, 004550285, 012138512, 010371540, 991188714, 991186888

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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