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BF245CRLRM

Onsemi

BF245CRLRM by Onsemi

BF245CRLRM by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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2

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< 1k

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Digiode

USA . 475 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 7,010 parts In-Stock

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TANS Electronics

Latvia . 6,888 parts In-Stock

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SupplyDigital Components

Austria . 4,796 parts In-Stock

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Kulean Microsystems

USA . 4,171 parts In-Stock

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Corphita

USA . 2,168 parts In-Stock

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Northwest PG Solutions

USA . 1,737 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 208 parts In-Stock

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Overview

Enhance your electronic designs with the BF245CRLRM by Onsemi, a high-quality RF Small Signal Field Effect Transistor (FET) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL transistor is perfect for amplifier applications in the ultra-high-frequency band. With its durable plastic/epoxy package and depletion mode operating mode, this single-configured transistor delivers superior functionality and efficiency. Upgrade your projects today with the BF245CRLRM and experience unparalleled value and benefits like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Polarity or Channel Type: N-CHANNEL

Suitable for use in circuits where an N-channel type transistor is required.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance.

Minimum DS Breakdown Voltage: 30 V

Can handle voltage fluctuations without damage, increasing product lifespan.

Package Shape: ROUND

Easily fits into circular spaces in circuit designs.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto circuit boards.

Operating Mode: DEPLETION MODE

Provides flexibility in circuit design for various applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for high-frequency signal processing applications.

No. of Terminals: 3

Simplifies circuit connections and layout.

Package Style (Meter): CYLINDRICAL

Offers a compact and space-efficient design for circuit integration.

Field Effect Transistor Technology: JUNCTION

Provides high performance and efficiency in signal amplification.

Transistor Element Material: SILICON

Ensures reliability and stability in various operating conditions.

Terminal Finish: TIN LEAD

Facilitates better electrical connections and reliability.

Maximum Drain Current (ID): 0.1 A

Able to handle high currents for efficient signal processing.

Terminal Position: BOTTOM

Allows for easy mounting and circuit board layout.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245CRLRM attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245CRLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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