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2N3819-E3

Vishay Intertechnology

2N3819-E3 by Vishay Intertechnology

2N3819-E3 by Vishay Intertechnology is a P-CHANNEL RF FET with 8V DS Breakdown Voltage. Ideal for ULTRA HIGH FREQ SWITCHING applications, it operates in DEPLETION MODE with 4pF Crss and 0.36W Power Dissipation at 150°C max temp.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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VNN

France . 2,192 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Vyrian

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Prism Electronics

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Ampacity Inc.

Singapore . 1,291 parts In-Stock

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AZTECH Wire

Italy . 826 parts In-Stock

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Continental Prestige Electronics

USA . 6,700 parts In-Stock

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Argo Parts USA

USA . 4,202 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover the ultimate in RF Small Signal Field Effect Transistors with Vishay Intertechnology's 2N3819-E3. Designed for ultra-high frequency applications, this P-Channel transistor offers unmatched performance and reliability. Ideal for switching applications, this single configuration transistor boasts a minimum DS breakdown voltage of 8V and maximum power dissipation of 0.36W. With its junction technology and matte tin terminal finish, the 2N3819-E3 provides exceptional quality and value. Upgrade your electronics with Vishay Intertechnology's industry-leading components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and protects the internal components from external elements, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel transistors tend to have lower leakage current and higher mobility, making them suitable for low-power applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low on-resistance for efficient performance.

Minimum DS Breakdown Voltage: 8 V

With a minimum breakdown voltage of 8V, this transistor can handle higher voltages, making it suitable for various electronic circuits.

Operating Mode: DEPLETION MODE

Depletion mode transistors can conduct current in the absence of a gate-source voltage, providing flexibility in circuit design.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures in electronic systems without compromising performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N3819-E3 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

8 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

4 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N3819-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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