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NE3516S02-T1C-A

Renesas Electronics

NE3516S02-T1C-A by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: QUAD; Maximum Drain Current (Abs) (ID): .06 A;

Median Price

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Suppliers In-Stock

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In-Stock Inventory

< 1k

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AZTECH Wire

Italy . 681 parts In-Stock

1+ parts

$18.040

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1k+ parts

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10k+ parts

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681

$18.040

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE3516S02-T1C-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

4 V

Maximum Drain Current (Abs) (ID):

.06 A

Maximum Drain Current (ID):

.06 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

S-PQMW-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROWAVE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.165 W

Minimum Power Gain (Gp):

13 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

QUAD

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

NE3516S02-T1C-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Renesas Electronics

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