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NE3509M04

Renesas Electronics

NE3509M04 by Renesas Electronics

N-CHANNEL; Surface Mount: YES; JESD-30 Code: R-PDSO-F4; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Terminal Position: DUAL;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE3509M04 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Minimum DS Breakdown Voltage:

4 V

Maximum Drain Current (ID):

.06 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

NE3509M04 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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