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NE3503M04-T2B-A

Renesas Electronics

NE3503M04-T2B-A by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Operating Temperature: 125 Cel; Package Shape: RECTANGULAR;

Median Price

$1.085

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Rochester

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$0.964

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$0.800

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$0.714

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Verical

USA . 105,000 parts In-Stock

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$1.206

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Microchip USA

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303

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Metaverse IC Inc.

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USA . 22,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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Futuretech Components

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE3503M04-T2B-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

3 V

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.015 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-PDSO-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.125 W

Minimum Power Gain (Gp):

11 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE3503M04-T2B-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Renesas Electronics

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