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NE350184C-T1-A

Renesas Electronics

NE350184C-T1-A by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: K BAND; Field Effect Transistor Technology: JUNCTION;

Median Price

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Lifecycle Status

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In-Stock Inventory

< 1k

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Kepictronics

USA . 654,000 parts In-Stock

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654,000

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RC Electronics

USA . 49,500 parts In-Stock

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49,500

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A-Z Elektronik GmbH

Germany . 7,969 parts In-Stock

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7,969

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Futuretech Components

Singapore . 668 parts In-Stock

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668

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE350184C-T1-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

3 V

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.015 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

K BAND

JESD-30 Code:

O-CRDB-F4

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.165 W

Minimum Power Gain (Gp):

11 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE350184C-T1-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Renesas Electronics

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