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NE3503M04-T2

Renesas Electronics

NE3503M04-T2 by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): .07 A; Field Effect Transistor Technology: HETERO-JUNCTION;

Median Price

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Lifecycle Status

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In-Stock Inventory

< 1k

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Modulus Dynamics

Lithuania . 450 parts In-Stock

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450

$1.365

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$1.365

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Kepictronics

USA . 1,499 parts In-Stock

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1,499

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Perfect Parts

USA . 616 parts In-Stock

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616

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE3503M04-T2 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

3 V

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.015 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.125 W

Minimum Power Gain (Gp):

10.5 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE3503M04-T2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Renesas Electronics

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