Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
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RF Small Signal Field Effect Transistors (FET) NE3510M04-T2-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics
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NE3510M04-T2-A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
LM107H/883
Texas Instruments
LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.
1552200253
Molex
WIRE AND CABLE;
SS14
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
06035C103KAT2A
KYOCERA AVX
06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.
1N4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Multicomp Pro
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
E8WSDC12-32.768KTR
Abracon
Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.
Itt Components
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;
2N2222A
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
Goodwork Semiconductor
Vicor
1N4148WT
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
LL4148
Kec
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
LM7805CT/NOPB
LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.
BAV99WT1G
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
2N3819
Onsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 25 V; Maximum Operating Temperature: 150 Cel;
BF1218
NXP Semiconductors
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
BF256ARLRM
BF256ARLRM by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high-frequency signal amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.
2N5484RLRM
2N5484RLRM by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers 0.03 A ID and 1 pF Crss at ULTRA HIGH FREQUENCY BAND. Packaged in PLASTIC/EPOXY, it has a ROUND shape with THROUGH-HOLE terminals.
ATF-36077-TR1
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: O-CRDB-F4; Minimum DS Breakdown Voltage: 3 V; Highest Frequency Band: KU BAND;
BF1100,215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 14 V;
2N5486RLRA
Onsemi's 2N5486RLRA is an N-CHANNEL RF FET with 10 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a max ID of 0.03 A and operates up to 150 °C, housed in a CYLINDRICAL package with PLASTIC/EPOXY body.
BF244ARLRE
BF244ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for ULTRA HIGH FREQUENCY AMPLIFIER applications. This THROUGH-HOLE transistor has a max ID of 0.1A and a CYLINDRICAL package shape.
BF256AG
RF Small Signal Field-Effect Transistors; JESD-609 Code: e1; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);
3N202
3N202 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage and 15dB Power Gain. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND, it features DUAL GATE, DEPLETION MODE operation and 0.36W Max Power Dissipation.
BF998
Philips Components
N-CHANNEL; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .025 pF;
2N4416
Temic Semiconductors
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
BF1207,115
NXP Semiconductors' BF1207,115 is a N-CHANNEL RF FET with 6V DS breakdown voltage and 21dB power gain. Ideal for amplifier applications in UHF band, it operates in dual gate enhancement mode with 0.03A max drain current and 0.18W power dissipation.
BF513-TAPE-7
BF513-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequencies. Its compact SO package ensures efficient surface mounting.
NE3210S01
Renesas Electronics
NE3210S01 by Renesas Electronics is a N-CHANNEL FET for AMPLIFIER applications. Features include 12 dB Gp, 3 V DS Breakdown Voltage, and KU BAND frequency band. It has a SINGLE configuration with surface mount capability and operates in DEPLETION MODE.
933505290215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Additional Features: LOW NOISE; Field Effect Transistor Technology: JUNCTION;
BF245B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: TIN LEAD; Package Style (Meter): CYLINDRICAL;
2SK192A-GR
Toshiba
The Toshiba 2SK192A-GR is an N-channel RF FET with a max power dissipation of 0.2W and operating temperature of 125°C. Ideal for amplifier applications in the very high-frequency band, it features a single configuration with a junction technology and through-hole terminals.
BLF188XR
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
BF998WRT/R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 4;
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NE3515S02-T1D-A
Nec Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PXMW-F4; Operating Mode: DEPLETION MODE; Terminal Position: UNSPECIFIED;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Transistor Application: AMPLIFIER; JESD-30 Code: R-PQMW-F4;
Nec Electronics America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Highest Frequency Band: KU BAND; Field Effect Transistor Technology: HETERO-JUNCTION;
NE3515S02-T1C-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Maximum Drain Current (ID): .025 A; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Maximum Drain Current (ID): .025 A; JESD-30 Code: R-PQMW-F4;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): MICROWAVE; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON;
NE3509M14-T3-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; JESD-30 Code: R-PDSO-F4; Field Effect Transistor Technology: JUNCTION;
NE3508M04-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .175 W; Field Effect Transistor Technology: HETERO-JUNCTION; Qualification: Not Qualified;
NE3510M04-T2B-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 150 Cel;
NE350184C-T1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: K BAND; Field Effect Transistor Technology: JUNCTION;
NE3503M04-A
NE3503M04-A by Renesas Electronics is a N-CHANNEL RF FET with 11 dB power gain, ideal for AMPLIFIER applications in KU BAND. Operating in DEPLETION MODE, it has a max drain current of 0.07 A and can handle up to 0.125 W power dissipation at 125 °C.
NE3508M04-T2B-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .175 W; Qualification: Not Qualified; Terminal Position: DUAL;
NE3509M04-T2B-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-F4;
NE3503M04-T2B-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Operating Temperature: 125 Cel; Package Shape: RECTANGULAR;
NE3510M04-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 3 V;
NE3503M04
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e0; Terminal Form: FLAT; Maximum Drain Current (ID): .015 A;
NE3509M04
N-CHANNEL; Surface Mount: YES; JESD-30 Code: R-PDSO-F4; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Terminal Position: DUAL;
NE3503M04-T2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): .07 A; Field Effect Transistor Technology: HETERO-JUNCTION;
NE3509M04-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Field Effect Transistor Technology: HETERO-JUNCTION; Minimum DS Breakdown Voltage: 3 V;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Highest Frequency Band: S BAND; Terminal Form: FLAT;
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