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2SC5245A-4-TL-E

Onsemi

2SC5245A-4-TL-E by Onsemi

The Onsemi 2SC5245A-4-TL-E is an NPN RF BJT with a max power dissipation of 0.15W, fT of 5000MHz, and hFE min of 60. Ideal for high-frequency applications in surface-mount configurations due to its low collector current and high operating temperature capabilities.

Median Price

$0.364

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 41,950 parts In-Stock

1+ parts

-

100+ parts

$0.342

1k+ parts

$0.284

10k+ parts

$0.253

41,950

-

$0.342

$0.284

$0.253

Verical

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.385

10k+ parts

$0.317

39,000

-

-

$0.385

$0.317

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Distributors (In-Stock)

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Digiode

USA . 2,350 parts In-Stock

1+ parts

$0.256

100+ parts

-

1k+ parts

-

10k+ parts

-

2,350

$0.256

-

-

-

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.806

100+ parts

-

1k+ parts

-

10k+ parts

-

900

$0.806

-

-

-

Chip Stock

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

-

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80,000

-

-

-

-

Flip Electronics

USA . 42,000 parts In-Stock

1+ parts

-

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42,000

-

-

-

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Vyrian

USA . 5,194 parts In-Stock

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5,194

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 388 parts In-Stock

1+ parts

$0.243

100+ parts

-

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-

10k+ parts

-

388

$0.243

-

-

-

Corohmni

South Africa . 156 parts In-Stock

1+ parts

$0.270

100+ parts

-

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-

10k+ parts

-

156

$0.270

-

-

-

Argo Parts USA

USA . 5,085 parts In-Stock

1+ parts

$0.806

100+ parts

-

1k+ parts

-

10k+ parts

-

5,085

$0.806

-

-

-

Continental Prestige Electronics

USA . 1,289 parts In-Stock

1+ parts

$0.806

100+ parts

-

1k+ parts

-

10k+ parts

$0.790

1,289

$0.806

-

-

$0.790

Metaverse IC Inc.

Canada . 30,000 parts In-Stock

1+ parts

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100+ parts

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30,000

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QUARKTWIN TECHNOLOGY LTD

USA . 24,421 parts In-Stock

1+ parts

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24,421

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Kulean Microsystems

USA . 5,118 parts In-Stock

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5,118

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TANS Electronics

Latvia . 5,037 parts In-Stock

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5,037

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Problanco Electronics

Mexico . 4,063 parts In-Stock

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4,063

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-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.790

1k+ parts

$0.766

10k+ parts

$0.750

1,000

-

$0.790

$0.766

$0.750

iodParts Technologies Inc.

India . 900 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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900

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SupplyDigital Components

Austria . 594 parts In-Stock

1+ parts

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594

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Kepictronics

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 182 parts In-Stock

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182

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Overview

Unleash the power of innovation with the Onsemi 2SC5245A-4-TL-E RF Small Signal Bipolar Junction Transistor. Crafted with precision by Onsemi, this NPN transistor offers unparalleled quality and reliability. Ideal for a wide range of applications, this transistor delivers exceptional performance and efficiency. Experience seamless integration and superior functionality with the Onsemi 2SC5245A-4-TL-E, the perfect choice for your electronic projects. Elevate your creations with this top-tier component that brings value, benefits, and advantages to all your designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance, making them a versatile choice for a range of applications.

Configuration: SINGLE

Single configuration transistors simplify circuit design and are easier to work with compared to multiple configurations, making this product user-friendly for designers.

Surface Mount: YES

Surface mount transistors are smaller in size, allowing for compact and space-saving designs, making this product suitable for use in constrained spaces.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels, ensuring reliability and efficiency in operation.

Minimum DC Current Gain (hFE): 60

A high minimum DC current gain of 60 ensures stable and consistent amplification performance in circuits utilizing this transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it suitable for use in demanding environments.

Maximum Collector Current (IC): 0.03 A

The maximum collector current of 0.03 A allows for handling of moderate current levels, ensuring the transistor is capable of driving loads effectively.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish provides good solderability and reliability, enhancing the overall quality and lifespan of the product.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor is easy to solder and mount, speeding up the assembly process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures proper soldering and reliability during assembly, making this product suitable for automated soldering processes.

Nominal Transition Frequency (fT): 5000 MHz

With a high nominal transition frequency of 5000 MHz, this transistor is capable of handling high-frequency signals efficiently, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC5245A-4-TL-E attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

2SC5245A-4-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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