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2SC5488A-TL-H

Onsemi

2SC5488A-TL-H by Onsemi

Onsemi's 2SC5488A-TL-H is an NPN RF BJT with hFE of 90, fT of 5000 MHz, and IC of 0.07 A. Ideal for high-frequency applications in surface-mount configurations due to its low power dissipation and high operating temperature capability up to 150 °C.

Median Price

$0.177

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14,234 parts In-Stock

1+ parts

$0.520

100+ parts

$0.218

1k+ parts

$0.142

10k+ parts

$0.111

14,234

$0.520

$0.218

$0.142

$0.111

DigiKey

USA . 15,635 parts In-Stock

1+ parts

$0.620

100+ parts

$0.245

1k+ parts

$0.166

10k+ parts

$0.125

15,635

$0.620

$0.245

$0.166

$0.125

Element14

Singapore . 2 parts In-Stock

1+ parts

$0.854

100+ parts

$0.344

1k+ parts

$0.206

10k+ parts

$0.180

2

$0.854

$0.344

$0.206

$0.180

Arrow

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.108

64,000

-

-

-

$0.108

Verical

USA . 64,000 parts In-Stock

1+ parts

-

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$0.108

64,000

-

-

-

$0.108

Future Electronics

Canada . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.099

8,000

-

-

-

$0.099

Chip1Stop

Japan . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.177

1k+ parts

$0.113

10k+ parts

-

8,000

-

$0.177

$0.113

-

Rochester

USA . 109 parts In-Stock

1+ parts

-

100+ parts

$0.140

1k+ parts

$0.116

10k+ parts

$0.104

109

-

$0.140

$0.116

$0.104

Farnell

UK . 2 parts In-Stock

1+ parts

-

100+ parts

$0.201

1k+ parts

$0.127

10k+ parts

$0.105

2

-

$0.201

$0.127

$0.105

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 8,000 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

-

10k+ parts

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8,000

$0.081

-

-

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Vyrian

USA . 56 parts In-Stock

1+ parts

$0.127

100+ parts

-

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56

$0.127

-

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Digiode

USA . 1,783 parts In-Stock

1+ parts

$0.433

100+ parts

-

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1,783

$0.433

-

-

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Cyclops Electronics Ltd

UK . 40,000 parts In-Stock

1+ parts

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40,000

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NAC Semi

USA . 16,000 parts In-Stock

1+ parts

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$0.151

16,000

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$0.151

Chip Stock

USA . 10,340 parts In-Stock

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10,340

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 290 parts In-Stock

1+ parts

$0.130

100+ parts

-

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290

$0.130

-

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Corphita

USA . 1,860 parts In-Stock

1+ parts

$0.410

100+ parts

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1,860

$0.410

-

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Native Components

USA . 761 parts In-Stock

1+ parts

$44.990

100+ parts

-

1k+ parts

-

10k+ parts

$43.190

761

$44.990

-

-

$43.190

Northwest PG Solutions

USA . 1,413 parts In-Stock

1+ parts

$49.489

100+ parts

-

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1,413

$49.489

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Perfect Parts

USA . 64,167 parts In-Stock

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64,167

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Continental Prestige Electronics

USA . 15,323 parts In-Stock

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$0.150

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15,323

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$0.150

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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Authorized Procurement Solutions

USA . 5,722 parts In-Stock

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SupplyDigital Components

Austria . 3,839 parts In-Stock

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3,839

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TANS Electronics

Latvia . 1,832 parts In-Stock

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Kulean Microsystems

USA . 995 parts In-Stock

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995

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Problanco Electronics

Mexico . 94 parts In-Stock

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UHIMA Technologies

Türkiye . 30 parts In-Stock

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30

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Overview

Enhance your RF signal performance with the 2SC5488A-TL-H by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that deliver reliable results. This NPN transistor is perfect for various applications in RF small signal amplification, providing superior performance and efficiency. With a minimum DC current gain of 90 and a nominal transition frequency of 5000 MHz, this transistor offers exceptional value and benefits to customers looking to optimize their RF circuits. Trust Onsemi's expertise and choose the 2SC5488A-TL-H for your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into various electronic systems.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and compact design, ideal for space-constrained applications.

Maximum Power Dissipation (Abs): 0.1 W

With a low power dissipation, this transistor is energy efficient and suitable for low-power devices.

Minimum DC Current Gain (hFE): 90

High DC current gain ensures stable and reliable amplification of signals in a circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions without compromising performance.

Maximum Collector Current (IC): 0.07 A

With a maximum collector current of 0.07A, this transistor can handle moderate current loads effectively.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and reliability during assembly.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes thermal stress on the component during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability of the component in harsh environments.

Nominal Transition Frequency (fT): 5000 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC5488A-TL-H attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

2SC5488A-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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