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BF959G

Onsemi

BF959G by Onsemi

BF959G by Onsemi is a NPN RF BJT with 3 terminals. It operates in the VHF band, has hFE of 35, and can handle up to 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 700MHz and max collector current of 0.1A.

Median Price

$0.215

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,158 parts In-Stock

1+ parts

$0.351

100+ parts

$0.035

1k+ parts

$0.022

10k+ parts

-

2,158

$0.351

$0.035

$0.022

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Rochester

USA . 3,966 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

3,966

-

$0.079

$0.066

$0.059

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 78 parts In-Stock

1+ parts

$0.058

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78

$0.058

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Digiode

USA . 548 parts In-Stock

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$0.062

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548

$0.062

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Chip Stock

USA . 50,000 parts In-Stock

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Vyrian

USA . 8,364 parts In-Stock

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VNN

France . 3,429 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,007 parts In-Stock

1+ parts

$0.055

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-

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3,007

$0.055

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Corohmni

South Africa . 357 parts In-Stock

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$0.056

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357

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Corphita

USA . 1,624 parts In-Stock

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$0.058

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AZTECH Wire

Italy . 168 parts In-Stock

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$16.220

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Perfect Parts

USA . 15,884 parts In-Stock

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Authorized Procurement Solutions

USA . 2,358 parts In-Stock

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GreenTree Electronics

Israel . 2,158 parts In-Stock

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Problanco Electronics

Mexico . 2,122 parts In-Stock

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Kulean Microsystems

USA . 1,295 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.057

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$0.055

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$0.054

1,000

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$0.057

$0.055

$0.054

SupplyDigital Components

Austria . 957 parts In-Stock

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957

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TANS Electronics

Latvia . 679 parts In-Stock

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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476

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Overview

Discover the BF959G by Onsemi, a top-quality RF Small Signal BJT transistor designed for high-performance amplification applications. With Onsemi's reputation for excellence in semiconductor manufacturing, this NPN transistor offers unmatched reliability and precision. Ideal for very high-frequency bands, the BF959G provides customers with unparalleled value and efficiency. Upgrade your electronic projects with the BF959G and experience the superior quality and benefits that Onsemi transistors have to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that ensures the transistor is well-protected and easy to handle during installation.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor that allows for easy integration into various amplifier circuits.

Configuration: SINGLE

Simplified design with only one transistor, making it easier to use and reduce complexity in circuit layout.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance and accuracy in signal amplification.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring very high frequency signals, making it ideal for use in communication systems and radar technology.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling high power levels, ensuring reliable operation and minimizing the risk of overheating.

Maximum Collector-Emitter Voltage: 20 V

Can handle relatively high voltage levels, making it versatile for a wide range of applications.

Nominal Transition Frequency (fT): 700 MHz

High transition frequency allows for efficient signal processing and amplification at high frequencies, ensuring excellent performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF959G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

35

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF959G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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