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CPH6001A-TL-E

Onsemi

CPH6001A-TL-E by Onsemi

CPH6001A-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.8W, hFE of 90, and fT of 5000MHz. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations at temperatures up to 150°C.

Median Price

$0.680

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,578 parts In-Stock

1+ parts

$0.680

100+ parts

$0.269

1k+ parts

$0.187

10k+ parts

$0.134

3,578

$0.680

$0.269

$0.187

$0.134

DigiKey

USA . 720 parts In-Stock

1+ parts

$0.680

100+ parts

$0.269

1k+ parts

$0.183

10k+ parts

$0.136

720

$0.680

$0.269

$0.183

$0.136

Chip1Stop

Japan . 2,740 parts In-Stock

1+ parts

$1.680

100+ parts

$0.383

1k+ parts

$0.276

10k+ parts

-

2,740

$1.680

$0.383

$0.276

-

Rochester

USA . 136,936 parts In-Stock

1+ parts

-

100+ parts

$0.158

1k+ parts

$0.131

10k+ parts

$0.117

136,936

-

$0.158

$0.131

$0.117

Verical

USA . 133,936 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.141

133,936

-

-

-

$0.141

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,160 parts In-Stock

1+ parts

$0.118

100+ parts

-

1k+ parts

-

10k+ parts

-

1,160

$0.118

-

-

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Vyrian

USA . 685 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

-

10k+ parts

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685

$0.124

-

-

-

ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 503 parts In-Stock

1+ parts

$0.112

100+ parts

-

1k+ parts

-

10k+ parts

-

503

$0.112

-

-

-

Corohmni

South Africa . 191 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

-

10k+ parts

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191

$0.124

-

-

-

Native Components

USA . 76 parts In-Stock

1+ parts

$244.440

100+ parts

$239.551

1k+ parts

$237.107

10k+ parts

$234.662

76

$244.440

$239.551

$237.107

$234.662

Northwest PG Solutions

USA . 851 parts In-Stock

1+ parts

$268.884

100+ parts

-

1k+ parts

-

10k+ parts

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851

$268.884

-

-

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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90,000

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Kepictronics

USA . 27,000 parts In-Stock

1+ parts

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100+ parts

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27,000

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Perfect Parts

USA . 19,723 parts In-Stock

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19,723

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Lixinc

USA . 17,984 parts In-Stock

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17,984

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QUARKTWIN TECHNOLOGY LTD

USA . 7,613 parts In-Stock

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7,613

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SupplyDigital Components

Austria . 7,443 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,443

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-

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Kulean Microsystems

USA . 6,046 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,046

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-

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Problanco Electronics

Mexico . 5,920 parts In-Stock

1+ parts

-

100+ parts

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5,920

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-

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.149

10k+ parts

-

3,000

-

-

$0.149

-

Authorized Procurement Solutions

USA . 2,840 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,840

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-

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GreenTree Electronics

Israel . 2,740 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,740

-

-

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TANS Electronics

Latvia . 2,562 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,562

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UHIMA Technologies

Türkiye . 238 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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238

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Overview

Unlock the potential of your RF applications with the high-quality CPH6001A-TL-E NPN RF Small Signal Bipolar Junction Transistor by Onsemi. Designed for reliability and performance, this single-configured transistor offers a maximum power dissipation of 0.8W and a minimum DC current gain of 90, making it ideal for a wide range of electronic devices. With surface mount capability and a nominal transition frequency of 5000 MHz, this product provides exceptional value and benefits to customers looking for top-tier components for their projects. Trust Onsemi for superior quality and innovation in RF technology.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and helps in reducing overall system complexity.

Surface Mount: YES

Surface mount capability allows for easy and compact integration into PCB designs.

Maximum Power Dissipation (Abs): 0.8 W

High power dissipation capability enables the transistor to operate reliably under demanding conditions.

Minimum DC Current Gain (hFE): 90

A high DC current gain ensures efficient amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector Current (IC): 0.1 A

The high collector current rating enables the transistor to handle current-intensive applications.

Terminal Finish: TIN BISMUTH

TIN BISMUTH finish provides good solderability and ensures secure connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes the risk of thermal damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures solder joints are properly formed during the assembly process.

Nominal Transition Frequency (fT): 5000 MHz

High transition frequency allows for fast switching and ensures high-frequency performance in RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CPH6001A-TL-E attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

CPH6001A-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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