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CPH6020-TL-E

Onsemi

CPH6020-TL-E by Onsemi

CPH6020-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.7W and fT of 13GHz. Ideal for high-frequency applications, it has a max operating temp of 150°C and IC of 0.15A, making it suitable for surface mount designs requiring high-speed performance.

Median Price

$0.230

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 111,000 parts In-Stock

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$0.230

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Flip Electronics (Authorized)

USA . 111,000 parts In-Stock

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Vyrian

USA . 1,688 parts In-Stock

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$0.300

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Flip Electronics

USA . 111,000 parts In-Stock

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DigiKey Marketplace

USA . 111,000 parts In-Stock

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Digiode

USA . 314 parts In-Stock

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314

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Corohmni

South Africa . 114 parts In-Stock

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$0.300

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Native Components

USA . 534 parts In-Stock

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$6.555

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534

$6.555

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Component Stockers USA

USA . 452 parts In-Stock

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$99.990

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452

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 27,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,695 parts In-Stock

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Kulean Microsystems

USA . 7,028 parts In-Stock

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SupplyDigital Components

Austria . 3,559 parts In-Stock

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Problanco Electronics

Mexico . 3,452 parts In-Stock

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Northwest PG Solutions

USA . 1,992 parts In-Stock

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$6.424

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TANS Electronics

Latvia . 1,172 parts In-Stock

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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Corphita

USA . 475 parts In-Stock

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475

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Overview

The CPH6020-TL-E by Onsemi is a top-of-the-line RF Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled quality and reliability. Manufactured by the trusted brand Onsemi, this NPN transistor is ideal for various applications in the electronics industry. With a maximum power dissipation of 0.7W and a nominal transition frequency of 13000 MHz, this transistor provides exceptional performance and efficiency. Customers can trust in the value and benefits that this product brings, making it a must-have for any project requiring high-quality electronic components.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance, making them suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easier to use in a variety of electronic applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.7 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliable performance in demanding applications.

Minimum DC Current Gain (hFE): 60

The high minimum DC current gain ensures that the transistor can provide stable amplification and accurate signal processing, making it suitable for use in precision circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures without performance degradation, ensuring reliability in harsh environmental conditions.

Maximum Collector Current (IC): 0.15 A

With a high maximum collector current, this transistor can handle significant current levels, making it suitable for use in power amplification circuits and other high-current applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and thermal performance, ensuring reliable connections and efficient heat dissipation in the finished product.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature helps prevent overheating during assembly, reducing the risk of thermal damage and ensuring product reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for robust solder joints and effective PCB assembly, ensuring long-term reliability in harsh operating conditions.

Nominal Transition Frequency (fT): 13000 MHz

With a high nominal transition frequency, this transistor can provide fast switching speeds and high-frequency performance, making it suitable for use in RF and microwave applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CPH6020-TL-E attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

CPH6020-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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